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Semiconductor device, and manufacturing method thereof

  • US 20060163624A1
  • Filed: 12/29/2005
  • Published: 07/27/2006
  • Est. Priority Date: 01/13/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a full-silicide gate electrode which is formed on a semiconductor substrate via a gate insulating film, and is fully silicided; and

    a source/drain region which has an upper main face formed higher than said semiconductor substrate so as to sandwich said full-silicide gate electrode, wherein said source/drain region includes a metal silicide film at least on the side of said upper main face.

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