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Power semiconductor device with endless gate trenches

  • US 20060163650A1
  • Filed: 01/24/2006
  • Published: 07/27/2006
  • Est. Priority Date: 01/27/2005
  • Status: Abandoned Application
First Claim
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1. A power semiconductor device comprising:

  • a drift region of a first conductivity;

    a base region of a second conductivity over said drift region;

    a plurality of endless trenches extending through said base region to said drift region;

    a gate insulation layer formed in each endless trench adjacent said base region; and

    a gate electrode residing in each endless trench.

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