Semiconductor device
First Claim
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1. A semiconductor device, comprising:
- a gate electrode;
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.
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Citations
53 Claims
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1. A semiconductor device, comprising:
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a gate electrode;
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different; and
a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A semiconductor device, comprising:
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a drain electrode;
a source electrode;
means for a channel to electrically couple the drain electrode and the source electrode; and
a gate electrode separated from the channel by a gate dielectric. - View Dependent Claims (15, 16)
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17. A method of forming a channel, comprising:
- providing at least one precursor composition including one or more precursor compounds that include Ax, and one or more compounds that include Bx, wherein each A is selected from the group of Cu, Ag, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A and B are different; and
depositing the channel including the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple a drain electrode and a source electrode. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
- providing at least one precursor composition including one or more precursor compounds that include Ax, and one or more compounds that include Bx, wherein each A is selected from the group of Cu, Ag, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A and B are different; and
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26. A method of manufacturing a semiconductor device, comprising:
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providing a drain electrode;
providing a source electrode;
step for providing a precursor composition including one or more precursor compounds that include Ax, and one or more compounds that include Bx, wherein each A is selected from the group of Cu, Ag, Sb each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A and B are different;
step for depositing a channel including depositing the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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33. A semiconductor device formed by the steps, comprising:
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providing a drain electrode;
providing a source electrode;
providing a precursor composition including one or more precursor compounds that include Ax and one or more compounds that include Bx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each x is independently a non-zero integer, and wherein each of A and B are different;
depositing a channel including the precursor composition to form a multi-cation oxide from the precursor composition to electrically couple the drain electrode and the source electrode;
providing a gate electrode; and
providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (34, 35, 36, 37, 38, 39, 40)
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41. A method for operating a semiconductor device, comprising:
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providing a semiconductor device that includes a source electrode, a drain electrode, a channel to electrically couple the source electrode and the drain electrode, and a gate electrode separated from the channel by a gate dielectric, wherein the channel includes a multi-cation oxide with at least one metal cation selected from the group Cu, Ag, Sb, and at least a second metal cation from the group Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, wherein each cation in the multi-cation oxide is different; and
applying a voltage to the gate electrode to effect a flow of charge carriers through the channel. - View Dependent Claims (42, 43)
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44. A display device, comprising:
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a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including;
a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxOx, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and wherein each of A and B are different;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (45, 46, 47, 48, 49, 50, 51, 52, 53)
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Specification