Semiconductor device and method for manufacturing the same, and electric device

• US 20060163743A1
• Filed: 01/11/2006
• Published: 07/27/2006
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Yamamoto, Hiroko
• Granted Patent: US 7,579,224 B2
• Time in Patent Office: Days
• US Class Current: 257/773
• CPC Class Codes: G02F 1/136227 Through-hole connection of the pixel electrode to the active element through an insulation layer
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76816 Aspects relating to the layout of the pattern or to the size of vias or trenches layout of the interconnections per se H01L23/528; CAD of ICs G06F30/00
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 23/49855 for flat-cards, e.g. credit cards cards per se G06K19/00
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1285 using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
• CPC Class Codes: H01L 27/1292 using liquid deposition, e.g. printing
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

It is an object of the present invention to simplify steps needed to process a wiring in forming a multilayer wiring. In addition, when a droplet discharging technique or a nanoimprint technique is used to form a wiring in a contact hole having a comparatively long diameter, the wiring in accordance with the shape of the contact hole is formed, and the wiring portion of the contact hole is likely to have a depression compared with other portions. A penetrating opening is formed by irradiating a light-transmitting insulating film with laser light having high intensity and a pulse high in repetition frequency. A plurality of openings having a minute contact area is provided instead of forming one penetrating opening having a large contact area to have an even thickness of a wiring by reducing a partial depression and also to ensure contact resistance.

Claims

1. A semiconductor device comprising:

a first conductive layer on a substrate;

an insulating film on the first conductive layer; and

a second conductive layer on the insulating film;

wherein the insulating film has a plurality of openings that reach the first conductive layer;

wherein the first conductive layer is connected to the second conductive layer through the plurality of openings, and

wherein a surface of the second conductive layer is leveled.

2. A semiconductor device according to claim 1, wherein the second conductive layer contains conductive particles.

3. A semiconductor device according to claim 1, wherein the second conductive layer contains conductive particles and the conductive particles are one or a plurality of kinds selected from silver, copper, gold, and nickel.

4. A semiconductor device according to claim 1, wherein the second conductive layer has a plurality of crystals where conductive particles are assembled and the plurality of crystals are overlapped.

5. A semiconductor device according to claim 1, wherein a width of the second conductive layer D and a diameter of each of the plurality of openings W satisfy 2D<

W.

6. A semiconductor device according to claim 1, wherein the second conductive layer contains conductive particles and a diameter of each of the plurality of openings is longer than that of each of the conductive particles.

7. A semiconductor device according to claim 1, wherein a diameter of each of the plurality of openings is 3 nm or more and 2000 nm or less.

8. A semiconductor device according to claim 1, wherein at least two openings among the plurality of openings are connected to each other in the insulating film.

9. A semiconductor device according to claim 1, wherein each of the plurality of openings is different in depth.

10. A semiconductor device according to claim 1, wherein a cross-sectional shape of the plurality of openings is a columnar shape, an L shape, a U shape, or a shape drawing an arc.

11. A semiconductor device according to claim 1, wherein the semiconductor device includes at least one of an antenna, a central processing unit, and a memory.

12. An electronic device using the semiconductor device according to claim 1.

13. A method for manufacturing a semiconductor device comprising the steps of:

forming a first conductive layer on a substrate;

forming an insulating film on the first conductive layer;

forming a plurality of openings that reach the first conductive layer in the insulating film by being selectively irradiated with laser light; and

forming a second conductive layer in contact with the first conductive layer though the plurality of openings by a droplet discharging method or a printing method.

14. A method according to claim 13, wherein a diameter of each of the plurality of openings is 3 nm or more and 2000 nm or less.

15. A method according to claim 13, wherein at least two openings among the plurality of openings are connected to each other in the insulating film.

16. A method according to claim 13, wherein the plurality of openings are different in depth.

17. A method according to claim 13, wherein a cross-sectional shape of the plurality of openings is a columnar shape, an L shape, a U shape, or a shape drawing an arc.

18. A method according to claim 13, wherein the plurality of openings is formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction.

19. A method according to claim 13, wherein a width of the second conductive layer D and a diameter of each of the plurality openings W satisfy 2D<

W.

20. A method according to claim 13, wherein the second conductive layer contains conductive particles and a diameter of each of the plurality of openings is longer than that of each of the conductive particles.

21. A method according to claim 13, wherein the second conductive layer is formed by filling a liquid material having conductive particles into the plurality of openings.

22. A method according to claim 13, wherein the laser light is oscillated when a pulse width of the laser light is 1 femtosecond or more and 10 picoseconds or less.

23. A method according to claim 13, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.

24. A method for manufacturing a semiconductor device comprising the steps of:

forming a first conductive layer on a substrate;

forming an insulating film on the first conductive layer;

forming a plurality of pores in the insulating film by being selectively irradiated with laser light;

removing upper regions of the insulating film of the plurality of pores to form a plurality of openings; and

forming a second conductive layer in contact with the first conductive layer though the plurality of openings by a droplet discharging method or a printing method.

25. A method according to claim 24, wherein a diameter of each of the plurality of openings is 3 nm or more and 2000 nm or less.

26. A method according to claim 24, wherein at least two openings among the plurality of openings are connected to each other in the insulating film.

27. A method according to claim 24, wherein the plurality of openings are different in depth.

28. A method according to claim 24, wherein a cross-sectional shape of the plurality of openings is a columnar shape, an L shape, a U shape, or a shape drawing an arc.

29. A method according to claim 24, wherein the plurality of openings is formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction.

30. A method according to claim 24, wherein a width of the second conductive layer D and a diameter of each of plurality the openings W satisfy 2D<

W.

31. A method according to claim 24, wherein the second conductive layer contains conductive particles and a diameter of each of the plurality of openings is longer than that of each of the conductive particles.

32. A method according to claim 24, wherein the second conductive layer is formed by filling a liquid material having conductive particles into the plurality of openings.

33. A method according to claim 24, wherein the laser light is oscillated when a pulse width of the laser light is 1 femtosecond or more and 10 picoseconds or less.

34. A method according to claim 24, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.

35. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a semiconductor substrate;

forming a second insulating film on the first insulating film;

forming a first opening that reaches the first insulating film in the second insulating film and a second opening that reaches the semiconductor substrate in the first insulating film and the second insulating film by being selectively irradiated with laser light; and

forming a gate electrode in contact with the first insulating film through the first opening and an electrode in contact with the semiconductor substrate through the second opening by a droplet discharging method or a printing method.

36. A method according to claim 35, wherein a diameter of each of the first opening and the second opening is 3 nm or more and 2000 nm or less.

37. A method according to claim 35, wherein the first opening and the second opening are a columnar shape, an L shape, a U shape, or a shape drawing an arc.

38. A method according to claim 35, wherein the first opening and the second opening are formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction.

39. A method according to claim 35, wherein a width of the second conductive layer D and a diameter of each of the first opening and the second opening W satisfy 2D<

W.

40. A method according to claim 35, wherein the second conductive layer contains conductive particles and a diameter of each of the first opening and the second opening is longer than that of each of the conductive particles.

41. A method according to claim 35, wherein the second conductive layer is formed by filling a liquid material having conductive particles into the first opening and the second opening.

42. A method according to claim 35, wherein the laser light is oscillated when a pulse width of the laser light is 1 femtosecond or more and 10 picoseconds or less.

43. A method according to claim 35, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.

44. A method for manufacturing a semiconductor device comprising the steps of:

forming a semiconductor layer on a substrate;

forming a first insulating film on the semiconductor layer;

forming a second insulating film on the first insulating film;

forming a first opening that reaches the first insulating film in the second insulating film and a second opening that reaches the semiconductor layer in the first insulating film and the second insulating film by being selectively irradiated with laser light; and

forming a gate electrode in contact with the first insulating film through the first opening and an electrode in contact with the semiconductor layer through the second opening by a droplet discharging method or a printing method.

45. A method according to claim 44, wherein a diameter of each of the first opening and the second opening is 3 nm or more and 2000 nm or less.

46. A method according to claim 44, wherein the first opening and the second opening are a columnar shape, an L shape, a U shape, or a shape drawing an arc.

47. A method according to claim 44, wherein the first opening and the second opening are formed by moving a focal position of the laser light to an X direction, a Y direction, or a Z direction.

48. A method according to claim 44, wherein a width of the second conductive layer D and a diameter of each of the first opening and the second opening W satisfy 2D<

W.

49. A method according to claim 44, wherein the second conductive layer contains conductive particles and a diameter of each of the first opening and the second opening is longer than that of each of the conductive particles.

50. A method according to claim 44, wherein the second conductive layer is formed by filling a liquid material having conductive particles into the first opening and the second opening.

51. A method according to claim 44, wherein the laser light is oscillated when a pulse width of the laser light is 1 femtosecond or more and 10 picoseconds or less.

52. A method according to claim 44, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.

53. A method for manufacturing a semiconductor device comprising the steps of:

forming a first insulating film on a substrate;

forming a semiconductor layer on the first insulating film;

forming a second insulating film on the semiconductor layer;

forming a pore in the first insulating film and an opening that reaches the semiconductor layer in the second insulating film by being selectively irradiated with laser light; and

forming a gate electrode through the pore and an electrode in contact with the semiconductor layer through the opening by a droplet discharging method or a printing method.

54. A method according to claim 53, wherein a diameter of the opening is 3 nm or more and 2000 nm or less.

55. A method according to claim 53, wherein the opening is a columnar shape, an L shape, a U shape, or a shape drawing an arc.

56. A method according to claim 53, wherein the pore and the opening are formed by moving a focal position of laser light to an X direction, a Y direction, or a Z direction.

57. A method according to claim 53, wherein a width of the second conductive layer D and a diameter of the opening W satisfy 2D<

W.

58. A method according to claim 53, wherein the second conductive layer contains conductive particles and a diameter of the opening is longer than that of each of the conductive particles.

59. A method according to claim 53, wherein the second conductive layer is formed by filling a liquid material having conductive particles into the pore and the opening.

60. A method according to claim 53, wherein the laser light is oscillated when a pulse width of the laser light is 1 femtosecond or more and 10 picoseconds or less.

61. A method according to claim 53, wherein the laser light has a fundamental wave emitted from a laser oscillator of which laser repetition frequency is 10 MHz or more.

62. A method according to claim 53, wherein the pore is formed by laser light irradiation from the side of the substrate.