Semiconductor device provided with feedback circuit including resistive element and capacitive element

• US 20060164055A1
• Filed: 01/19/2006
• Published: 07/27/2006
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Kuroiwa, Tatsuo, Hata, Takehiro, Onishi, Eiji
• Granted Patent: US 7,417,414 B2
• Time in Patent Office: Days
• US Class Current: 323/282
• CPC Class Codes: H02M 3/156 with automatic control of output voltage or current, e.g. switching regulators

Abstract

The present invention provides a switching power supply circuit capable of stabilizing an output voltage as well as increasing a response speed of the output voltage by improving a phase margin of an open loop as a whole of the switching power supply circuit. The switching power supply circuit according to the present invention includes a resistor and a capacitor in addition to a configuration of a conventional switching power supply circuit. The resistor is connected between a node and the capacitor. The capacitor is connected between the resistor and another node. The resistor and the capacitor configure a phase compensation circuit. The phase compensation circuit has a cut-off frequency in accordance with a resonance frequency of an inductor and a capacitor by adjusting a resistance value of the resistor and a capacitance of the capacitor.

Claims

1. A semiconductor device comprising:

an input terminal;

an output terminal;

a switching element which is connected between said input terminal and said output terminal;

an output voltage detection circuit which detects an output voltage as a voltage of said output terminal;

a control circuit which is connected between a control electrode of said switching element and said output voltage detection circuit, and controls driving of said switching element on the basis of said output voltage detected by said output voltage detection circuit; and

a feedback circuit which is connected between a first node as an output electrode of said switching element and a second node located between said output voltage detection circuit and said control circuit, and includes a resistive element and a capacitive element.

2. The semiconductor device according to claim 1, wherein

said resistive element is connected to said second node through said capacitive element.

3. The semiconductor device according to claim 1, wherein

said control circuit has a phase compensation circuit including a resistive element and a capacitive element,

a difference between the order of a resistance value of said resistive element in said feedback circuit and the order of a resistance value of said resistive element in said phase compensation circuit is within two digits, and

a difference between the order of a capacitance of said capacitive element in said feedback circuit and the order of a capacitance of said capacitive element in said phase compensation circuit is within two digits.

4. A semiconductor device comprising:

an input terminal;

an output terminal;

a switching element which is connected between a first node located between said input terminal and said output terminal and a ground potential;

an output voltage detection circuit which detects an output voltage as a voltage of said output terminal;

a control circuit which is connected between a control electrode of said switching element and said output voltage detection circuit, and controls driving of said switching element on the basis of said output voltage detected by said output voltage detection circuit; and

a feedback circuit which is connected between said control electrode and a second node located between said output voltage detection circuit and said control circuit, and includes a resistive element and a capacitive element.

5. The semiconductor device according to claim 4, wherein

said resistive element is connected to said second node through said capacitive element.

6. The semiconductor device according to claim 4, wherein

said control circuit has a phase compensation circuit including a resistive element and a capacitive element,

a difference between the order of a resistance value of said resistive element in said feedback circuit and the order of a resistance value of said resistive element in said phase compensation circuit is within two digits, and

a difference between the order of a capacitance of said capacitive element in said feedback circuit and the order of a capacitance of said capacitive element in said phase compensation circuit is within two digits.

7. A semiconductor device comprising:

an input terminal;

an output terminal;

a transformer which is connected between said input terminal and said output terminal;

a switching element which is connected to said transformer;

an output voltage detection circuit which detects an output voltage as a voltage of said output terminal;

a control circuit which is connected between a control electrode of said switching element and said output voltage detection circuit, and controls driving of said switching element on the basis of said output voltage detected by said output voltage detection circuit; and

a feedback circuit which is connected between a first node located between said control electrode and said output voltage detection circuit and a second node located between said output voltage detection circuit and said control circuit, and includes a resistive element and a capacitive element.

8. The semiconductor device according to claim 7, wherein

said resistive element is connected to said second node through said capacitive element.

9. The semiconductor device according to claim 7, wherein

said control circuit has a phase compensation circuit including a resistive element and a capacitive element,

a difference between the order of a resistance value of said resistive element in said feedback circuit and the order of a resistance value of said resistive element in said phase compensation circuit is within two digits, and

a difference between the order of a capacitance of said capacitive element in said feedback circuit and the order of a capacitance of said capacitive element in said phase compensation circuit is within two digits.

10. A semiconductor device comprising:

an input terminal;

an output terminal;

a switching element which is connected between said input terminal and said output terminal;

an output voltage detection circuit which detects an output voltage as a voltage of said output terminal;

a control circuit which is connected between a control electrode of said switching element and said output voltage detection circuit, and controls driving of said switching element on the basis of said output voltage detected by said output voltage detection circuit; and

a feedback circuit which is connected between said control electrode and a node located between said output voltage detection circuit and said control circuit, and includes a resistive element and a capacitive element.

11. The semiconductor device according to claim 10, wherein

said resistive element is connected to said node through said capacitive element.

12. The semiconductor device according to claim 10, wherein

said control circuit has a phase compensation circuit including a resistive element and a capacitive element,

a difference between the order of a resistance value of said resistive element in said feedback circuit and the order of a resistance value of said resistive element in said phase compensation circuit is within two digits, and

a difference between the order of a capacitance of said capacitive element in said feedback circuit and the order of a capacitance of said capacitive element in said phase compensation circuit is within two digits.

13. A semiconductor device comprising:

a first input terminal;

a first output terminal;

a first switching element which is connected between said first input terminal and said first output terminal;

a first output voltage detection circuit which detects a first output voltage as a voltage of said first output terminal;

a first control circuit which is connected between a control electrode of said first switching element and said first output voltage detection circuit, and controls driving of said first switching element on the basis of said first output voltage detected by said first output voltage detection circuit;

a first feedback circuit which is connected between a first node as an output electrode of said first switching element and a second node located between said first output voltage detection circuit and said first control circuit, and includes a first resistive element and a first capacitive element;

a second input terminal;

a second output terminal;

a second switching element which is connected between a third node located between said second input terminal and said second output terminal and a ground potential;

a second output voltage detection circuit which detects a second output voltage as a voltage of said second output terminal;

a second control circuit which is connected between a control electrode of said second switching element and said second output voltage detection circuit, and controls driving of said second switching element on the basis of said second output voltage detected by said second output voltage detection circuit; and

a second feedback circuit which is connected between said control electrode of said second switching element and a fourth node located between said second output voltage detection circuit and said second control circuit, and includes a second resistive element and a second capacitive element.

14. The semiconductor device according to claim 13, further comprising:

a third switching element which is connected between said first node and a ground potential; and

a fourth switching element which is connected between said third node and said second output terminal, wherein

said first control circuit has;

a first driver which is connected to said control electrode of said first switching element; and

a second driver which is connected to a control electrode of said third switching element, and

said second control circuit has;

a third driver which is connected to said control electrode of said second switching element; and

a fourth driver which is connected to a control electrode of said fourth switching element.

15. The semiconductor device according to claim 13, wherein

said first resistive element is connected to said second node through said first capacitive element, and

said second resistive element is connected to said fourth node through said second capacitive element.

16. The semiconductor device according to claim 13, wherein

said first control circuit has a first phase compensation circuit which includes a third resistive element and a third capacitive element,

said second control circuit has a second phase compensation circuit which includes a fourth resistive element and a fourth capacitive element,

a difference between the order of a resistance value of said first resistive element and the order of a resistance value of said third resistive element is within two digits,

a difference between the order of a capacitance of said first capacitive element and the order of a capacitance of said third capacitive element is within two digits,

a difference between the order of a resistance value of said second resistive element and the order of a resistance value of said fourth resistive element is within two digits, and

a difference between the order of a capacitance of said second capacitive element and the order of a capacitance of said fourth capacitive element is within two digits.