Resonator and component with hermetic encapsulation
First Claim
1. A resonator for use with bulk acoustic waves, the resonator comprising:
- a wafer;
a layer structure above the wafer;
a dielectric layer above the layer structure, the dielectric layer comprising a hermetic encapsulation for the resonator, the dielectric layer comprising a material and having a thickness that result in a first acoustic impedance; and
a metal layer above the dielectric layer, the metal layer comprising a material and having a thickness that result in a second acoustic impedance, the second acoustic impedance being higher than the first acoustic impedance, the metal layer and the dielectric layer being parts of an acoustic mirror for bulk acoustic waves in the resonator;
wherein the layer structure comprises;
first and second electrode layers that comprise electrodes for the resonator; and
at least one piezoelectric layer that is between the first and second electrode layers.
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Accused Products
Abstract
Proposed is a resonator which works with bulk acoustic waves and is based on a layer structure known in the art, which is arranged over a substrate. According to the invention, the total surface of the layer structure, including all resonators contained therein, is covered with a dielectric layer and a metal layer which together form an acoustic mirror, a low-k dielectric being used for the dielectric layer. The total-surface mirror offers broadband functionality over a suitable frequency range. The dielectric contained within the mirror acts as a sealing protective layer for the resonator or resonators.
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Citations
20 Claims
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1. A resonator for use with bulk acoustic waves, the resonator comprising:
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a wafer;
a layer structure above the wafer;
a dielectric layer above the layer structure, the dielectric layer comprising a hermetic encapsulation for the resonator, the dielectric layer comprising a material and having a thickness that result in a first acoustic impedance; and
a metal layer above the dielectric layer, the metal layer comprising a material and having a thickness that result in a second acoustic impedance, the second acoustic impedance being higher than the first acoustic impedance, the metal layer and the dielectric layer being parts of an acoustic mirror for bulk acoustic waves in the resonator;
wherein the layer structure comprises;
first and second electrode layers that comprise electrodes for the resonator; and
at least one piezoelectric layer that is between the first and second electrode layers. - View Dependent Claims (2, 3, 18, 19, 20)
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4. A component comprising:
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a plurality of resonators that are electrically interconnected by electrode layers to form at least a portion of a circuit;
wherein the plurality of resonators comprise;
a wafer layer structures on the wafer;
a dielectric layer above the layer structures, the dielectric layer comprising a hermetic encapsulation for the plurality of resonators, the dielectric layer comprising a material and having a thickness that result in a first acoustic impedance; and
a metal layer above the dielectric layer, the metal layer comprising a material and having a thickness that result in a second acoustic impedance, the second acoustic impedance being higher than the first acoustic impedance, the metal layer and the dielectric layer being parts of an acoustic mirror, wherein each of the layer structures comprises first and second electrode layers that comprise electrodes, and at least one piezoelectric layer that is between the first and second electrode layers. - View Dependent Claims (5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification