Ruthenium containing layer deposition method

• US 20060165892A1
• Filed: 09/15/2005
• Published: 07/27/2006
• Est. Priority Date: 01/27/2005
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Weidman, Timothy W.
• Granted Patent: US 7,438,949 B2
• Time in Patent Office: Days
• US Class Current: 427/248.100
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/4488 by in situ generation of reactive gas by chemical or electrochemical reaction
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/5096 Flat-bed apparatus
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76843 formed in openings in a dielectric
• CPC Class Codes: H01L 21/76873 for electroplating

Abstract

An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.

Claims

1. A method of forming a ruthenium containing layer on a substrate surface, comprising the steps of:

forming a ruthenium tetroxide in a first vessel;

delivering an amount of the ruthenium tetroxide contained in the first vessel to a second vessel;

purging the second vessel after the amount of the ruthenium tetroxide has been delivered to the second vessel from the first vessel; and

delivering an amount of ruthenium tetroxide contained in the second vessel to a substrate positioned on a substrate support in a vacuum processing chamber.

2. A method of claim 1, wherein the amount of ruthenium tetroxide is delivered to a second vessel that has a surface that is maintained at a temperature below about 25°

C.

3. A method of claim 1, wherein the substrate support is maintained at a temperature between about 20°

C. and about 450°

C.;

4. A method of claim 1, wherein forming a ruthenium tetroxide in the first vessel comprises:

forming an ozone containing gas; and

delivering the ozone containing gas to a surface of a ruthenium containing material positioned in the first vessel.

5. A method of claim 4, wherein the ruthenium containing material is a material selected from a group consisting of metallic ruthenium, sodium perruthenate or potassium perruthenate.

6. A method of claim 1, wherein the purging process is completed until the oxygen or ozone concentration is less than about 100 ppm.

7. A method of forming a ruthenium containing layer on a substrate surface, comprising the steps of:

forming a ruthenium tetroxide containing gas in a first vessel;

delivering an amount of the ruthenium tetroxide containing gas from the first vessel to a second vessel;

collecting a desired amount of ruthenium tetroxide from the ruthenium tetroxide containing gas on a surface of the second vessel that is maintained at a first temperature;

purging the second vessel to remove unwanted contaminants contained in the second vessel;

vaporizing an amount of the ruthenium tetroxide found on the surface of the second vessel; and

delivering an amount of the vaporized ruthenium tetroxide from the second vessel to a substrate positioned on a substrate support in a processing chamber to form a ruthenium containing layer on a surface of the substrate.

8. A method of claim 7, wherein the first temperature of the surface is between about −

20°

C. and about 25°

C.

9. A method of claim 7, wherein the vaporizing step comprises:

heating the surface of the second vessel to a second temperature between about 0°

C. and about 25°

C.

10. A method of claim 7, wherein the processing chamber is a vacuum processing chamber that is adapted to process a substrate at a processing pressure between about 0.1 mTorr and about 50 Torr.

11. A method of forming a ruthenium containing layer on a substrate surface, comprising the steps of:

providing a solvent mixture that comprises a solvent and ruthenium tetroxide; and

delivering the solvent mixture to a substrate positioned on a substrate support in a processing chamber.

12. A method of claim 11, wherein the substrate support is maintained at a temperature below about 350°

C..

13. A method of claim 11, wherein the process chamber is maintained at a pressure less than about 10 Torr.

14. A method of claim 11, wherein the solvent is selected from a group consisting of perfluorocarbons, hydroflurocarbons, or chlorofluorocarbons.

15. A method of claim 11, wherein the solvent is selected from a group consisting of perfluoropentane, perfluorohexane, fluorotrichloromethane or 1,1,2-trichloro-1,2,2-trifluoroethane.

16. A method of forming a ruthenium containing layer on a substrate surface, comprising the steps of:

providing an aqueous solution that comprises a perruthenate material, water and a hypochlorite containing material;

adding an amount of an acid to the aqueous solution;

adding a solvent to the aqueous solution to form a solvent containing mixture;

removing the water from the solvent containing mixture;

separating the ruthenium tetroxide from the solvent containing mixture; and

delivering the ruthenium tetroxide to a substrate positioned on a substrate support in a processing chamber.

17. A method of claim 16, wherein the substrate support is maintained at a temperature between about 20°

C. and about 450°

C.;

18. A method of claim 16, wherein the perruthenate material is selected from a group consisting of sodium perruthenate or potassium perruthenate.

19. A method of claim 16, further comprising.

purging the second vessel after the amount of the ruthenium tetroxide containing gas has been received in the second vessel.

20. A method of claim 16, wherein the solvent is selected from a group consisting of perfluorocarbons, hydroflurocarbons, or chlorofluorocarbons.

21. A method of claim 16, wherein the solvent is selected from a group consisting of perfluoropentane, perfluorohexane, fluorotrichloromethane or 1,1,2-trichloro-1,2,2-trifluoroethane.

22. A method of forming a ruthenium containing layer on a substrate surface, comprising the steps of:

providing an aqueous solution that comprises a perruthenate material, water and a hypochlorite containing material;

adding an amount of an acid to the aqueous solution;

adding a solvent to the aqueous solution;

delivering an amount of the solvent mixture to a second vessel;

separating the ruthenium tetroxide from the other solvent mixture components;

delivering the separated ruthenium tetroxide to a second vessel;

purging the second vessel to remove unwanted contaminants contained in the second vessel;

delivering an amount of the ruthenium tetroxide in the second vessel to a substrate positioned on a substrate support in a processing chamber.

23. A process of forming ruthenium tetroxide, comprising the steps of:

providing an aqueous solution that comprises a perruthenate material, water and a hypochlorite containing material;

adding an amount of an acid to the aqueous solution;

adding a solvent to the aqueous solution containing the perruthenate and the hypochlorite to form a solvent mixture;

delivering an amount of the solvent mixture to a second vessel; and

separating the ruthenium tetroxide from the solvent mixture components.