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Method for plasma etching a chromium layer suitable for photomask fabrication

  • US 20060166107A1
  • Filed: 01/27/2005
  • Published: 07/27/2006
  • Est. Priority Date: 01/27/2005
  • Status: Active Grant
First Claim
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1. A method of etching a chromium layer, comprising:

  • providing a filmstack in an etching chamber, the filmstack having a chromium layer partially exposed through a patterned layer;

    providing at least one halogen containing process gas to a processing chamber;

    forming a plasma from the process gases;

    biasing the layer disposed on a substrate support in the processing chamber with a plurality of power pulses less than 600 Watts; and

    etching the chromium layer through a patterned mask.

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