Apparatus for depositing seed layers
First Claim
1. An apparatus for depositing seed layers over a substrate, said substrate comprising at least one opening surrounded by a field, the apparatus comprising:
- a CVD chamber adapted to deposit a CVD seed layer over the substrate;
a PVD chamber adapted to deposit a PVD seed layer over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, first causes the CVD chamber to deposit a CVD seed layer over the substrate and then causes the PVD chamber to deposit a PVD seed layer over the CVD seed layer, wherein (a) at least one of the seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (b) the CVD seed layer having a thickness of less than about 200 Å
over the field, (c) the PVD seed layer having a thickness from about 100 Å
to about 2,000 Å
over the field, (d) the PVD seed layer is thicker than the CVD seed layer over the field, and (e) the controller causes the stopping of the deposition of the CVD and the PVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening.
2 Assignments
0 Petitions
Accused Products
Abstract
One embodiment of the present invention is an apparatus for depositing seed layers over a substrate, said substrate includes at least one opening surrounded by a field, the apparatus includes: (a) a CVD chamber adapted to deposit a CVD seed layer over the substrate; (b) a PVD chamber adapted to deposit a PVD seed layer over the substrate; and (c) a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, causes first the CVD chamber to deposit a CVD seed layer over the substrate and then causes the PVD chamber to deposit a PVD seed layer over the CVD seed layer, wherein (i) at least one of the seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (ii) the CVD seed layer having a thickness of less than about 200 Å over the field, (iii) the PVD seed layer having a thickness from about 100 Å to about 2,000 Å over the field, (iv) the PVD seed layer is thicker than the CVD seed layer over the field, and (v) the controller causes the stopping of the deposition of the CVD and the PVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening.
-
Citations
24 Claims
-
1. An apparatus for depositing seed layers over a substrate, said substrate comprising at least one opening surrounded by a field, the apparatus comprising:
-
a CVD chamber adapted to deposit a CVD seed layer over the substrate;
a PVD chamber adapted to deposit a PVD seed layer over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, first causes the CVD chamber to deposit a CVD seed layer over the substrate and then causes the PVD chamber to deposit a PVD seed layer over the CVD seed layer, wherein (a) at least one of the seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (b) the CVD seed layer having a thickness of less than about 200 Å
over the field, (c) the PVD seed layer having a thickness from about 100 Å
to about 2,000 Å
over the field, (d) the PVD seed layer is thicker than the CVD seed layer over the field, and (e) the controller causes the stopping of the deposition of the CVD and the PVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. An apparatus for depositing seed layers on a substrate, said substrate comprising at least one opening surrounded by a field, the apparatus comprising:
-
a PVD chamber adapted to deposit a PVD seed layer over the substrate;
a CVD chamber adapted to deposit a CVD seed layer over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, first causes the PVD chamber to deposit a PVD seed layer over the substrate and then causes the CVD chamber to deposit a CVD seed layer over the PVD seed layer, wherein (a) at least one of said seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (b) the PVD seed layer having a thickness of more than about 250 Å
over the field, (c) the CVD seed layer having a thickness of less than about 200 Å
over the field, and (d) the controller further causes the stopping of the deposition of the PVD and the CVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening. - View Dependent Claims (8, 9, 10, 11, 12)
-
-
13. An apparatus for depositing two or more PVD seed layers over a substrate in a single PVD chamber, the substrate including a patterned insulating layer which comprises at least one opening surrounded by a field, the at least one opening having sidewalls and bottom, and the apparatus comprising:
-
a PVD chamber adapted to deposit PVD seed layers over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the PVD chamber, wherein the controller, in response to the recipe information, causes the PVD chamber to deposit a continuous PVD seed layer over the sidewalls and bottom of the at least one opening using a first set of deposition parameters, and causes the PVD chamber to deposit another PVD seed layer over the substrate, using a second set of deposition parameters, wherein (a) the second set of deposition parameters includes at least one deposition parameter which is different than in the first set of deposition parameters, (b) at least one of said seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (c) the continuous PVD seed layer having a thickness greater than about 50 Å
over the field, (d) the combined seed layers provide a low electrical resistance path over the field to enable uniform plating across the substrate, and (e) the controller causes the stopping of the deposition of the continuous and the additional PVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening. - View Dependent Claims (14, 15, 16)
-
-
17. An apparatus for depositing PVD seed layers over a substrate, said substrate comprising at least one opening surrounded by a field, the at least one opening having sidewalls and bottom, and the apparatus comprising:
-
a first PVD chamber adapted to deposit a continuous PVD seed layer over the sidewalls and bottom of the at least one opening;
a second PVD chamber adapted to deposit PVD seed layers over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, causes the first PVD chamber to deposit a continuous PVD seed layer over the sidewalls and bottom of the at least one opening, using a first set of deposition parameters, and causes the second PVD chamber to deposit another PVD seed layer over the substrate, using a second set of deposition parameters, wherein (a) the second set of deposition parameters includes at least one deposition parameter which is different than in the first set of deposition parameters, (b) at least one of said seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (c) the continuous PVD seed layer having a thickness greater than about 50 Å
over the field, (d) the combined seed layers provide a low electrical resistance path over the field to enable uniform plating across the substrate, and (e) the controller causes the stopping of the deposition of the continuous and the additional PVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening. - View Dependent Claims (18, 19, 20)
-
-
21. An apparatus for depositing two or more CVD seed layers over a substrate, the substrate including at least one opening surrounded by a field, the at least one opening having sidewalls and bottom, and the apparatus comprising:
-
at least one CVD chamber adapted for depositing CVD seed layers over the substrate; and
a controller which includes recipe information, said recipe information includes deposition sequence and process parameters for operation of the deposition chambers, wherein the controller, in response to the recipe information, causes the at least one CVD chamber to deposit a first CVD seed layer over the sidewalls and bottom of the at least one opening, using a first set of deposition parameters, and causes the at least one CVD chamber to deposit a second CVD seed layer over the first CVD seed layer, using a second set of deposition parameters, wherein (a) the second set of deposition parameters includes at least one deposition parameter which is different than in the first set of deposition parameters, (b) at least one of said CVD seed layers comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals, (c) at least one of said CVD seed layers having a thickness greater than about 50 Å
over the field, and (d) the controller causes the stopping of the deposition of the CVD seed layers prior to filling the at least one opening, thereby leaving enough room for electroplating inside the at least one opening. - View Dependent Claims (22, 23, 24)
-
Specification