In-situ-etch-assisted HDP deposition
First Claim
1. A method for depositing a silicon oxide film on a substrate disposed in a process chamber, the method comprising:
- flowing a process gas comprising a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant into the process chamber;
forming a plasma having an ion density of at least 1011 ions/cm3 from the process gas; and
depositing the silicon oxide film over the substrate with a halogen concentration less than 1.0 at. %, wherein;
depositing the silicon oxide film comprises depositing the silicon oxide film with the plasma using a process that has simultaneous deposition and sputtering components; and
a flow rate of the halogen source to the process chamber to a flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
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Abstract
A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
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Citations
14 Claims
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1. A method for depositing a silicon oxide film on a substrate disposed in a process chamber, the method comprising:
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flowing a process gas comprising a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant into the process chamber;
forming a plasma having an ion density of at least 1011 ions/cm3 from the process gas; and
depositing the silicon oxide film over the substrate with a halogen concentration less than 1.0 at. %, wherein;
depositing the silicon oxide film comprises depositing the silicon oxide film with the plasma using a process that has simultaneous deposition and sputtering components; and
a flow rate of the halogen source to the process chamber to a flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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Specification