In-situ-etch-assisted HDP deposition

• US 20060166515A1
• Filed: 03/24/2006
• Published: 07/27/2006
• Est. Priority Date: 09/03/2003
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Li, DongQing, Byun, Jeong Soo, Karim, M. Ziaul, Pham, Thanh N.
• Granted Patent: US 7,294,588 B2
• Time in Patent Office: Days
• US Class Current: 438/788
• CPC Class Codes: C23C 16/045 Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: H01L 21/02164 the material being a silicon oxide, e.g. SiO2
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/31612 on a silicon body
• CPC Class Codes: H01L 21/76837 Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics

Abstract

A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 10^{11 ions/cm3} is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

Claims

1. A method for depositing a silicon oxide film on a substrate disposed in a process chamber, the method comprising:

flowing a process gas comprising a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant into the process chamber;

forming a plasma having an ion density of at least 10¹¹ ions/cm³ from the process gas; and

depositing the silicon oxide film over the substrate with a halogen concentration less than 1.0 at. %, wherein;

depositing the silicon oxide film comprises depositing the silicon oxide film with the plasma using a process that has simultaneous deposition and sputtering components; and

a flow rate of the halogen source to the process chamber to a flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.

2. The method recited in claim 1 wherein the temperature of the substrate during such depositing is substantially between 500 and 800°

C.

3. The method recited in claim 1 wherein the temperature of the substrate during such depositing is substantially between 700 and 800°

C.

4. The method recited in claim 1 wherein the silicon source comprises SiH₄.

5. The method recited in claim 4 wherein the oxidizing gas reactant comprises O₂.

6. The method recited in claim 5 wherein the halogen source comprises a fluorine source.

7. The method recited in claim 6 wherein the halogen source comprises SiF₄.

8. The method recited in claim 1 wherein the fluent gas comprises H₂ and has a flow rate to the process chamber less than 1500 sccm.

9. The method recited in claim 8 wherein a flow rate of the oxidizing gas reactant to the process chamber is greater than a factor times a sum of the flow rate of the fluorine source and the flow rate of silicon source to the process chamber, the factor being less than about 1.8 for a flow rate of H₂ to the process chamber less than about 300 sccm and being between about 1.8 and 3.0 for a flow rate of H₂ to the process chamber greater than about 300 sccm.

10. The method recited in claim 1 wherein the fluent gas comprises an inert gas.

11. The method recited in claim 10 wherein the inert gas comprises He.

12. The method recited in claim 1 wherein the silicon oxide film is a first portion of a silicon oxide layer, the method further comprising:

depositing a second portion of the silicon oxide layer over the substrate with a halogen concentration less than 1.0 at. %; and

etching one of the first and second portions of the silicon oxide layer between depositing the silicon oxide film and depositing the second portion of the silicon oxide layer.

13. The method recited in claim 12 wherein depositing the second portion of the silicon oxide layer is performed before the etching and depositing the silicon oxide film is performed after the etching.

14. The method recited in claim 12 wherein depositing the second portion of the silicon oxide layer comprises:

flowing a second process gas comprising the halogen source, the fluent gas, the silicon source, and the oxidizing gas reactant into the process chamber; and

forming a second plasma having an ion density of at least 10¹¹ ions/cm³ from the second process gas.