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Etchant treatment processes for substrate surfaces and chamber surfaces

  • US 20060169669A1
  • Filed: 10/03/2005
  • Published: 08/03/2006
  • Est. Priority Date: 01/31/2005
  • Status: Active Grant
First Claim
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1. A method for forming a silicon-containing material on a substrate surface, comprising:

  • positioning a substrate containing a silicon material within a process chamber;

    exposing the substrate to an etching gas containing chlorine gas and a silicon source during an etching process;

    exposing the substrate to a deposition gas during a deposition process; and

    exposing the process chamber to a chamber clean gas containing the chlorine gas and the silicon source during a chamber clean process.

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