Substrate having pattern and method for manufacturing the same, and semiconductor device and method for manufacturing the same
First Claim
1. A substrate having a film pattern comprising:
- a film in which silicon and oxygen are combined and an inactive group is combined with the silicon, formed on the substrate; and
a film pattern formed over the film.
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Accused Products
Abstract
The present invention provides a method for manufacturing a substrate having a pattern that is capable of controlling the distance between adjacent film patterns, and also provides a method for manufacturing a substrate, particularly, having a pattern with a narrow width and a thickness that is capable of controlling the width between the film patterns. The present invention provides a method for manufacturing a substrate having a conductive film that serves as an antenna with a little variation in inductance and has a large electromotive force, and provides a method for manufacturing a semiconductor device with high yield. After forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon over a substrate, an insulating film, or a conductive film, a composition is printed by the printing method thereover, and is baked to form a film pattern.
95 Citations
21 Claims
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1. A substrate having a film pattern comprising:
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a film in which silicon and oxygen are combined and an inactive group is combined with the silicon, formed on the substrate; and
a film pattern formed over the film. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a substrate having a film pattern comprising:
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forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon on a substrate;
printing a composition on the film by printing method; and
baking the composition to form a film pattern. - View Dependent Claims (6, 7, 8)
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9. A semiconductor device comprising:
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a film in which silicon and oxygen are combined and an inactive group is combined with the silicon formed on an insulating film; and
a conductive film formed on the film in which silicon and oxygen are combined and an inactive group is combined with the silicon. - View Dependent Claims (10)
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11. A semiconductor device comprising:
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a semiconductor element over a substrate;
a first conductive film connecting to the semiconductor element;
an insulating film over the semiconductor element and the first conductive film, the insulating film having an opening portion to expose a part of the first conductive film;
a film in which silicon and oxygen are combined and an inactive film is combined with the silicon, formed on the insulating film and the exposed first conductive film; and
a second conductive film formed on the film in which silicon and oxygen are combined and an inactive group is combined with the silicon. - View Dependent Claims (12, 13, 14)
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15. A method for manufacturing a semiconductor device comprising:
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forming a film in which silicon and oxygen are combined and an inactive group is combined with the silicon, on an insulating film;
printing composition on the film in which silicon and oxygen are combined and an inactive group is combined with the silicon by printing method; and
baking the composition to form a film pattern. - View Dependent Claims (16, 17)
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18. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor element over a substrate;
forming a conductive film connecting to the semiconductor element;
forming an insulating film covering the semiconductor element and the conductive film, the insulating film having an opening portion to expose part of the conductive film;
forming a film in which silicon and oxygen are combined and an inactive film is combined with the silicon on the insulating film and the exposed conductive film;
printing a composition over the film in which silicon and oxygen are combined and an inactive group is combined with the silicon by printing method; and
baking the composition to form a conductive pattern. - View Dependent Claims (19, 20, 21)
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Specification