Current sensor

• US 20060170529A1
• Filed: 01/27/2006
• Published: 08/03/2006
• Est. Priority Date: 01/31/2005
• Status: Active Grant

• Current Assignee: TDK Corporation
• Original Assignee: TDK Corporation
• Inventors: Shoji, Shigeru
• Granted Patent: US 7,589,612 B2
• Time in Patent Office: Days
• US Class Current: 338/32.R
• CPC Class Codes: G01R 15/205 using magneto-resistance devices, e.g. field plates

Abstract

A current sensor that is compact can detect with high sensitivity and high accuracy a magnetic field generated by a current. The current sensor has a thin film coil including turn portions extending in an X-axis direction at a second layer, and a first magnetoresistive element which includes element patterns disposed at a first layer in areas corresponding to the turn portions, the resistance value of which varies according to a magnetic field generated by a current detected of from 10 to 50 mA flowing through the turn portions. The distance between each turn portion and each element pattern is from 0.4 to 1.0 μm. Each cross-sectional area at the turn portions is from 0.4 to 3.0 μm². This permits efficient detection of a magnetic field without the influence of heat generated from the thin film coil.

Claims

1. A current sensor for detecting a current in the range of 10 mA to 50 mA, comprising:

a first conductor disposed in a first layer, the first conductor having a first extended portion extending in a first direction and being supplied with the current; and

a first magnetoresistive element disposed in a second layer in an area corresponding to the first extended portion, a resistance value of the first magnetoresistive element varying according to a first magnetic field generated by the current flowing through the first extended portion,

the current sensor satisfying the following conditional expressions (1) and (2);

0.4 μ

m≦

D1≦

1.0 μ

m  

 

(1)
0.4 μ

m²≦

S1≦

3.0 μ

m²  

 

(2)

where D1 is a distance between a first extended portion and a first magnetoresistive element; and

S1 is an area of a cross-section orthogonal to a first direction in the first extended portion.

3. The current sensor according to claim 1, further comprising:

a second conductor disposed in a third layer located on a side opposite to the first layer with respective to the second layer, the second conductor having a second extended portion extending in the first direction in correspondence with the first magnetoresistive element and generating a second magnetic field through the current supplied, the second magnetic field then applied on the first magnetoresistive element in the same direction as the first magnetic field,

the current sensor satisfying the following conditional expressions (5) and (6);

0.4 μ

m≦

D2≦

1.0 μ

m  

 

(5)
0.4 μ

m²≦

S2≦

3.0 μ

m²  

 

(6)

where D2 is a distance between a second extended portion and a first magnetoresistive element; and

S2 is an area of a cross-section orthogonal to a first direction in the second extended portion.

5. The current sensor according to claim 3, wherein

the first magnetoresistive element has a plurality of strip-shaped element patterns extending in the first direction and disposed adjacent each other in a second direction orthogonal to the first direction,

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element, and

the second conductor is a second thin film coil which winds in the third layer while including a plurality of turns as the second extended portion, each turn of the second thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the second thin film coil generating the second magnetic field through the current supplied, the second magnetic field then applied on each of the element patterns of the first magnetoresistive element.

7. The current sensor according to claim 1, wherein

the first magnetoresistive element has a plurality of strip-shaped element patterns extending in the first direction and are disposed adjacent each other in a second direction orthogonal to the first direction,

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element.

9. The current sensor according to claim 5, wherein each of the element patterns in the first magnetoresistive element is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

11. The current sensor according to claim 7, wherein each of the element patterns in the first magnetoresistive element is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

14. The current sensor according to claim 1, further comprising:

a third conductor disposed in the first layer, the third conductor having a third extended portion extending in the first direction in an area other than where the first conductor is formed and being supplied with the current; and

a second magnetoresistive element disposed in the second layer in an area corresponding to the third extended portion and commonly connected to the first magnetoresistive element, a resistance value of the second magnetoresistive element varying according to a third magnetic field generated by the current flowing through the third extended portion,

the current sensor satisfying the following conditional expressions (11) and (12);

0.4 μ

m≦

D3≦

1.0 μ

m  

 

(11)
0.4 μ

m²≦

S3≦

3.0 μ

m²  

 

(12)

where D3 is a distance between a third extended portion and a second magnetoresistive element; and

S3 is an area of a cross-section orthogonal to a first direction in the third extended portion.

16. The current sensor according to claim 14, wherein a direction of a resistance value variation of the second magnetoresistive element produced through the third magnetic field is opposite to that of the first magnetoresistive element produced through the first magnetic field.

18. The current sensor according to claim 14, wherein each of the first and second magnetoresistive elements has a plurality of strip-shaped element patterns extending in the first direction and disposed adjacent each other in a second direction orthogonal to the first direction.

20. The current sensor according to claim 18, wherein each of the element patterns in the first and second magnetoresistive elements is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

22. The current sensor according to claim 18, wherein

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element, and

the third conductor is a third thin film coil which winds in the first layer while including a plurality of turns as the third extended portion, each turn of the third thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the third thin film coil generating the third magnetic field through the current supplied, the third magnetic field then applied on each of the element patterns of the second magnetoresistive element.

24. The current sensor according to claim 14, further comprising:

a second conductor disposed in a third layer located on a side opposite to the first layer with respective to the second layer, the second conductor having a second extended portion extending in the first direction in correspondence with the first magnetoresistive element and generating a second magnetic field through the current supplied, the second magnetic field then applied on the first magnetoresistive element in the same direction as the first magnetic field; and

a fourth conductor disposed in the third layer, located in an area other than where the second conductor is formed, the fourth conductor having a fourth extended portion extending in the first direction in correspondence with the second magnetoresistive element and generating a fourth magnetic field through the current supplied, the fourth magnetic field then applied on the second magnetoresistive element in the same direction as the third magnetic field,

the current sensor satisfying the following conditional expressions (17) to (20);

0.4 μ

m≦

D2≦

1.0 μ

m  

 

(17)
0.4 μ

m≦

D4≦

1.0 μ

m  

 

(18)
0.4 μ

m²≦

S2≦

3.0 μ

m²  

 

(19)
0.4 μ

m²≦

S4≦

3.0 μ

m²  

 

(20)

where D2 is a distance between a second extended portion and a first magnetoresistive element;

S2 is an area of a cross-section orthogonal to a first direction in the second extended portion;

D4 is a distance between a fourth extended portion and a second magnetoresistive element; and

S4 is an area of a cross-section orthogonal to a first direction in the fourth extended portion.

26. The current sensor according to claim 24, wherein a direction of a resistance value variation of the second magnetoresistive element produced through the third and fourth magnetic fields is opposite to that of the first magnetoresistive element produced through the first and second magnetic fields.

28. The current sensor according to claim 24, wherein each of the first and second magnetoresistive elements has a plurality of strip-shaped element patterns extending in the first direction and are disposed adjacent each other in the second direction.

30. The current sensor according to claim 28, wherein each of the element patterns in the first and second magnetoresistive elements is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

32. The current sensor according to claim 28, wherein

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element,

the second conductor is a second thin film coil which winds in the third layer while including a plurality of turns as the second extended portion, each turn of the second thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the second thin film coil generating the second magnetic field through the current supplied, the second magnetic field then applied on each of the element patterns of the first magnetoresistive element,

the third conductor is a third thin film coil which winds in the first layer while including a plurality of turns as the third extended portion, each turn of the third thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the third thin film coil generating the third magnetic field through the current supplied, the third magnetic field then applied on each of the element patterns of the second magnetoresistive element, and

the fourth conductor is a fourth thin film coil which winds in the third layer while including a plurality of turns as the fourth extended portion, each turn of the fourth thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the fourth thin film coil generating the fourth magnetic field through the current supplied, the fourth magnetic field then applied on each of the element patterns of the second magnetoresistive element.

2. A current sensor for detecting a current in the range of 3 mA to 50 mA, comprising:

a first conductor disposed in a first layer, the first conductor having a first extended portion extending in a first direction and being supplied with the current; and

a first magnetoresistive element disposed in a second layer in an area corresponding to the first extended portion, a resistance value of the first magnetoresistive element varying according to a first magnetic field generated by the current flowing through the first extended portion,

the current sensor satisfying the following conditional expressions (3) and (4);

0.2 μ

m≦

D1≦

0.4 μ

m  

 

(3)
0.4 μ

m²≦

S1≦

2.5 μ

m²  

 

(4)

where D1 is a distance between a first extended portion and a first magnetoresistive element; and

S1 is an area of a cross-section orthogonal to a first direction in the first extended portion.

4. The current sensor according to claim 2, further comprising:

a second conductor disposed in a third layer located on a side opposite to the first layer with respective to the second layer, the second conductor having a second extended portion extending in the first direction in correspondence with the first magnetoresistive element and generating a second magnetic field through the current supplied, the second magnetic field then applied on the first magnetoresistive element in the same direction as the first magnetic field,

the current sensor satisfying the following conditional expressions (7) and (8);

0.2 μ

m≦

D2≦

0.4 μ

m  

 

(7)
0.4 μ

m²≦

S2≦

2.5 μ

m²  

 

(8)

where D2 is a distance between a second extended portion and a first magnetoresistive element; and

S2 is an area of a cross-section orthogonal to a first direction in the second extended portion.

6. The current sensor according to claim 4, wherein

the first magnetoresistive element has a plurality of strip-shaped element patterns extending in the first direction and disposed adjacent each other in a second direction orthogonal to the first direction,

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element, and

the second conductor is a second thin film coil which winds in the third layer while including a plurality of turns as the second extended portion, each turn of the second thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the second thin film coil generating the second magnetic field through the current supplied, the second magnetic field then applied on each of the element patterns of the first magnetoresistive element.

8. The current sensor according to claim 2, wherein

the first magnetoresistive element has a plurality of strip-shaped element patterns extending in the first direction and are disposed adjacent each other in a second direction orthogonal to the first direction,

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element.

10. The current sensor according to claim 6, wherein each of the element patterns in the first magnetoresistive element is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

12. The current sensor according to claim 8, wherein each of the element patterns in the first magnetoresistive element is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

13. The current sensor according to claim 2, further comprising:

a third conductor disposed in the first layer, the third conductor having a third extended portion extending in the first direction in an area other than where the first conductor is formed and being supplied with the current; and

a second magnetoresistive element disposed in the second layer in an area corresponding to the third extended portion and commonly connected to the first magnetoresistive element, a resistance value of the second magnetoresistive element varying according to a third magnetic field generated by the current flowing through the third extended portion,

the current sensor satisfying the following conditional expressions (9) and (10);

0.2 μ

m≦

D3≦

0.4 μ

m  

 

(9)
0.4 μ

m²≦

S3≦

2.5 μ

m²  

 

(10)

where D3 is a distance between a third extended portion and a second magnetoresistive element; and

S3 is an area of a cross-section orthogonal to a first direction in the third extended portion.

15. The current sensor according to claim 13, wherein a direction of a resistance value variation of the second magnetoresistive element produced through the third magnetic field is opposite to that of the first magnetoresistive element produced through the first magnetic field.

17. The current sensor according to claim 13, wherein each of the first and second magnetoresistive elements has a plurality of strip-shaped element patterns extending in the first direction and disposed adjacent each other in a second direction orthogonal to the first direction.

19. The current sensor according to claim 17, wherein each of the element patterns in the first and second magnetoresistive elements is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

21. The current sensor according to claim 17, wherein

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element, and

the third conductor is a third thin film coil which winds in the first layer while including a plurality of turns as the third extended portion, each turn of the third thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the third thin film coil generating the third magnetic field through the current supplied, the third magnetic field then applied on each of the element patterns of the second magnetoresistive element.

23. The current sensor according to claim 13, further comprising:

a second conductor disposed in a third layer located on a side opposite to the first layer with respective to the second layer, the second conductor having a second extended portion extending in the first direction in correspondence with the first magnetoresistive element and generating a second magnetic field through the current supplied, the second magnetic field then applied on the first magnetoresistive element in the same direction as the first magnetic field; and

a fourth conductor disposed in the third layer, located in an area other than where the second conductor is formed, the fourth conductor having a fourth extended portion extending in the first direction in correspondence with the second magnetoresistive element and generating a fourth magnetic field through the current supplied, the fourth magnetic field then applied on the second magnetoresistive element in the same direction as the third magnetic field,

the current sensor satisfying the following conditional expressions (13) to (16);

0.2 μ

m≦

D2<

0.4 μ

m  

 

(13)
0.2 μ

m≦

D4≦

0.4 μ

m  

 

(14)
0.4 μ

m²≦

S2≦

2.5 μ

m²  

 

(15)
0.4 μ

m²≦

S4≦

2.5 μ

m²  

 

(16)

where D2 is a distance between a second extended portion and a first magnetoresistive element;

S2 is an area of a cross-section orthogonal to a first direction in the second extended portion;

D4 is a distance between a fourth extended portion and a second magnetoresistive element; and

S4 is an area of a cross-section orthogonal to a first direction in the fourth extended portion.

25. The current sensor according to claim 23, wherein a direction of a resistance value variation of the second magnetoresistive element produced through the third and fourth magnetic fields is opposite to that of the first magnetoresistive element produced through the first and second magnetic fields.

27. The current sensor according to claim 23, wherein each of the first and second magnetoresistive elements has a plurality of strip-shaped element patterns extending in the first direction and are disposed adjacent each other in the second direction.

29. The current sensor according to claim 27, wherein each of the element patterns in the first and second magnetoresistive elements is in the range of 0.5 μ

m to 2.0 μ

m in a width orthogonal to the first direction.

31. The current sensor according to claim 27, wherein

the first conductor is a first thin film coil which winds in the first layer while including a plurality of turns as the first extended portion, each turn of the first thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the first thin film coil generating the first magnetic field through the current supplied, the first magnetic field then applied on each of the element patterns of the first magnetoresistive element,

the second conductor is a second thin film coil which winds in the third layer while including a plurality of turns as the second extended portion, each turn of the second thin film coil extending in the first direction in correspondence with each of the element patterns of the first magnetoresistive element, the second thin film coil generating the second magnetic field through the current supplied, the second magnetic field then applied on each of the element patterns of the first magnetoresistive element,

the third conductor is a third thin film coil which winds in the first layer while including a plurality of turns as the third extended portion, each turn of the third thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the third thin film coil generating the third magnetic field through the current supplied, the third magnetic field then applied on each of the element patterns of the second magnetoresistive element, and

the fourth conductor is a fourth thin film coil which winds in the third layer while including a plurality of turns as the fourth extended portion, each turn of the fourth thin film coil extending in the first direction in correspondence with each of the element patterns of the second magnetoresistive element, the fourth thin film coil generating the fourth magnetic field through the current supplied, the fourth magnetic field then applied on each of the element patterns of the second magnetoresistive element.