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Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

  • US 20060172497A1
  • Filed: 06/27/2003
  • Published: 08/03/2006
  • Est. Priority Date: 06/27/2003
  • Status: Active Grant
First Claim
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1. A nonplanar semiconductor device comprising:

  • a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate, wherein said semiconductor body has a pair of laterally opposite sidewalls;

    a gate dielectric formed on said top surface of said semiconductor body, on said bottom surface of said semiconductor body, and on said laterally opposite sidewalls of said semiconductor body;

    a gate electrode formed on said gate dielectric, on said top surface of said semiconductor body and adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body and beneath said gate dielectric on said bottom surface of said semiconductor body; and

    a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.

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