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Semiconductor device having a high carbon content strain inducing film and a method of manufacture therefor

  • US 20060172556A1
  • Filed: 02/01/2006
  • Published: 08/03/2006
  • Est. Priority Date: 02/01/2005
  • Status: Abandoned Application
First Claim
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1. A method for manufacturing a semiconductor device, comprising:

  • forming a gate structure over a substrate; and

    forming a strain inducing film over the substrate and proximate the gate structure, the strain inducing film-comprising a bis t-butylaminosilane (BTBAS) silicon nitride layer formed using ratio of bis t-butylaminosilane (BTBAS) to ammonia (NH3) of 1;

    1 or greater.

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