3-D transformer for high-frequency applications
First Claim
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1. A method of fabricating a three-dimensional microelectronic inductive device comprising:
- providing a pre-processed semiconductor substrate;
depositing a photo-resist sacrificial layer on top of the semiconductor substrate;
depositing a bi-metal layer on top of the sacrificial layer;
patterning the metal layers by depositing a photo-resist mask layer on top of the bi-metal layer to define areas for removal of certain areas of the layer of the bi-metal layer to form a number of finger-shaped extensions;
releasing the certain areas of the bi-metal layer from the sacrificial layer and the substrate in order to allow the areas to bend upward from the semiconductor substrate; and
joining the end part of the finger-shaped extensions of the certain areas of the bi-metal layer with neighboring end part of the finger-shaped extensions of the certain areas of the bi-metal layer to form a three-dimensional structure.
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Abstract
A stressed metal technology may fabricate high-Q, three-dimensional microelectronic inductors and transformers. The fabrication method may allow the production of inductors and transformers on high-resistivity silicon substrate and with metal deposition of Au and Cr that is fully compatible with semiconductor fabrication technologies. The produced inductors and transformers exhibit Q factors>60 at frequencies of 3 to 7 GHz. High efficiency, high-Q transformers with coupling factors 0.6<k<0.9 may be created with very high self-resonance frequencies
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Citations
20 Claims
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1. A method of fabricating a three-dimensional microelectronic inductive device comprising:
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providing a pre-processed semiconductor substrate;
depositing a photo-resist sacrificial layer on top of the semiconductor substrate;
depositing a bi-metal layer on top of the sacrificial layer;
patterning the metal layers by depositing a photo-resist mask layer on top of the bi-metal layer to define areas for removal of certain areas of the layer of the bi-metal layer to form a number of finger-shaped extensions;
releasing the certain areas of the bi-metal layer from the sacrificial layer and the substrate in order to allow the areas to bend upward from the semiconductor substrate; and
joining the end part of the finger-shaped extensions of the certain areas of the bi-metal layer with neighboring end part of the finger-shaped extensions of the certain areas of the bi-metal layer to form a three-dimensional structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 19)
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11. A three-dimensional microelectronic inductive device for use in integrated circuit applications comprising:
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a semiconductor substrate having a planar surface;
metal line interconnects running along the surface of the semiconductor substrate;
metal fingers each separated by a gap from each other formed on the substrate and connected to the metal line interconnects; and
where the fingers meeting neighboring fingers above the semiconductor substrate to form a coil-shaped device with a diameter and a central axis of the coil substantially parallel to a plane formed by the surface of the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 20)
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Specification