Imaging device

• US 20060176401A1
• Filed: 10/24/2003
• Published: 08/10/2006
• Est. Priority Date: 10/24/2002
• Status: Abandoned Application

• Current Assignee: Science and Technology Facilities Council
• Original Assignee: Science and Technology Facilities Council
• Inventors: Turchetta, Renato Andrea Danilo
• Application Number:
  US10/532,425
• Publication Number:
  US 20060176401A1
• Time in Patent Office: Days
• US Class Current: 348/571
• CPC Class Codes: H04N 25/581 acquired simultaneously
• CPC Class Codes: H04N 25/65 applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
• CPC Class Codes: H04N 25/766 comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion

Abstract

An imaging device comprising a two-dimensional array of pixels which are scanned to build up a desired image. Each pixel comprises a sensor such as a photodiode PD which outputs a signal dependent upon the strength of the incident radiation. This signal is amplified in an inverter circuit MB1, MIN and switched by transistors MW1, MW2 which in turn are controlled by a write signal applied to their connected gate electrodes. During the write period, the output signal from photodiode PD is passed to a line (4) which is input to a number n+1 of memory cells MO to Mn which are switched sequentially via respective control inputs sample to sample to receive and store respective samples of the amplified signal from photodiode PD. The stored samples are read out sequentially over a read period during which a read transistor MSE, controlled by a read signal at its gate electrode, connects the memory cells to an output terminal (3) connected to the column bus.

Claims

1. An imaging device comprising an array of pixels in which, for each pixel, there is provided:

a sensor which is sensitive to a variable quantity to be imaged and for outputting a signal representative of the variation in said quantity during an integration period;

amplifier means for amplifying the signal from said sensor;

a plurality of memory cells for holding sequential samples of the amplified signal from the sensor during the integration period; and

read switch means actuable to enable the contents of said memory cells to be read out.

2. An imaging device as claimed in claim 1 wherein the sensor, amplifier means, memory cells and read switch means are located within the circuitry of each pixel.

3. An imaging device as claimed in claim 1 wherein each memory cell comprises a selection means and a storage means.

4. An imaging device as claimed in claim 3 wherein said selection means is actuated to select that memory cell by a control signal from a common timing circuit.

5. An imaging device as claimed in claim 4 wherein said timing circuit is such that, during each integration period, at least one memory cell at a time is selected in succession and a sample representative of the instantaneous value of the amplified output signal from the sensor is written to the storage means of the selected memory cell.

6. An imaging device as claimed in claim 5 wherein the timing circuit acts to write samples throughout the integration period, there being a sufficient number of memory cells that each cell stores a single sample.

7. An imaging circuit as claimed in claim 6 wherein the samples are arranged at evenly spaced time intervals throughout the integration period.

8. An imaging device as claimed in claim 1 further comprising write switch means operable to connect the output signal from said sensor to the memory cells via said amplifier means.

9. An imaging device as claimed in claim 8 wherein said write switch means is operable to energise and de-energise said amplifier means to thereby selectively allow the passage of the output signal of said sensor through the amplifier means to the memory cells.

10. An imaging device as claimed in claim 9 wherein said write switch means comprises a first switch means operable to energise and de-energise said amplifier means as aforsaid, and a second switch means located in the signal path from the output of said amplifier means, and wherein said first and second switch means may or may not be actuated in common.

11. An imaging device as claimed in claim 3 wherein said timing circuit is further operable, during a read period corresponding with the actuation of said read switch means, to successively read the samples stored within the memory cells.

12. An imaging device as claimed in claim 11 wherein the memory cells are read out on a one-by-one basis.

13. An imaging device as claimed in claim 11 wherein multiple memory cells are read out simultaneously and means are provided for carrying out an analogue operation on the simultaneously read out samples and outputting a resultant signal.

14. An imaging device as claimed in claim 11 wherein said timing circuit is such as to separate the read period from the integration period, so that they do not overlap.

15. An imaging device as claimed in claim 11 wherein said timing circuit is such as to overlap the read period and the integration period, and wherein the operations of writing into the individual memory cells and reading from the individual memory cells are time interleaved with one another.

16. An imaging device as claimed in claim 11 further comprising read reset means for resetting the circuit prior to the commencement of each read period.

17. An imaging device as claimed in claim 16 wherein said reset means is operable to reset the circuit between each reading of a sample stored within a respective memory means.

18. An imaging device as claimed in claim 11 wherein said read switch means includes a single select switch for sequentially passing the contents of the storage means within respective memory cells, as they are read out, to an output connected to a column bus.

19. An imaging device as claimed in claim 11 wherein said read switch means comprises a select switch located within each memory cell, wherein said timing means is such as to actuate said select switches to thereby select the memory cells for reading out, and wherein the outputs of said select switches are passed to a common output which is connected to a column bus.

20. An imaging device as claimed in claim 16 wherein said read switch means comprises two select switches, one located between the storage means and the read reset means, and one located between the read reset means and an output connected to a column bus.

21. An imaging device as claimed in claim 1 wherein said variable quantity is electromagnetic radiation.

22. An imaging device as claimed in claim 21 in which the radiation is visible light.

23. An imaging device as claimed in claim 1 wherein said sensor is sensitive to charged particles.

24. An imaging device as claimed in claim 1 wherein said variable quantity is neutron radiation.

25. An imaging device as claimed in claim 1 wherein said variable quantity is a voltage.

26. An imaging device as claimed in claim 1 wherein said amplifier means comprises a MOS transistor connected as a source follower.

27. An imaging device as claimed in claim 1 wherein said amplifier means is an inverter comprising a pair of MOS transistors.

28. An imaging device as claimed in claim 1 wherein said amplifier means comprises a charge amplifier.

29. An imaging device as claimed in claim 1 wherein said amplifier means comprises a differential amplifier having inverting and non-inverting inputs.

30. An imaging device as claimed in claim 29 wherein the output from the sensor is connected to one of said inputs, and a threshold signal is connected to the other of said inputs, the arrangement being such that the amplifier means generates an output only if the input signal exceeds a certain threshold level.

31. An imaging device as claimed in claim 1 including a further amplifier means for amplifying the signal read out from said memory cells.

35. An imaging device as claimed in claim 39 wherein said or each amplifier is constituted by a MOS transistor connected as a source follower.

36. An imaging device as claimed in claim 39 wherein said or each amplifier comprises a charge amplifier.

37. An imaging device as claimed in claim 1 wherein said amplifier means is continuously energised during the integration period.

38. An imaging device as claimed in claim 2 including a further amplifier means for amplifying the signal read out from said memory cells, and wherein said further amplifier means is located within the circuitry of each pixel.

39. An imaging device as claimed in claim 18 including a further amplifier means for amplifying the signal read out from said memory cells, and wherein said further amplifier means comprises a single amplifier common to all of said memory cells.

40. An imaging device as claimed in claim 19 including a further amplifier means for amplifying the signal read out from said memory cells, and wherein said further amplifier means comprises an amplifier located within each memory cell.

32-34. -34. (canceled)