METHODS FOR FORMING THIN OXIDE LAYERS ON SEMICONDUCTOR WAFERS
First Claim
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1. A method for forming an oxide layer on a silicon wafer, comprising:
- A] applying a first fluorinated process reagent to the wafer, with the fluorinated process agent acting to remove silicon dioxide from the wafer;
B] growing a self-terminating chemical oxide layer on the wafer;
C] applying a second fluorinated process reagent to the chemical oxide layer on the wafer to reduce the thickness of the chemical oxide layer; and
D] applying a layer of material over the chemical oxide layer.
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Abstract
An oxide layer on a silicon wafer may be removed by applying a process chemical such as hydrofluoric acid to the wafer. This will typically remove substantially all of the existing oxide layer, leaving a bare silicon surface. A high quality self-terminating chemical oxide layer may then be grown on the wafer. The chemical oxide layer is then chemically etched to achieve a thinned oxide layer. A layer of material, which may be a high-K dielectric material, is than applied onto the thinned oxide layer. Microelectronic devices having improved electrical characteristics can be manufactured using this process.
19 Citations
26 Claims
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1. A method for forming an oxide layer on a silicon wafer, comprising:
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A] applying a first fluorinated process reagent to the wafer, with the fluorinated process agent acting to remove silicon dioxide from the wafer;
B] growing a self-terminating chemical oxide layer on the wafer;
C] applying a second fluorinated process reagent to the chemical oxide layer on the wafer to reduce the thickness of the chemical oxide layer; and
D] applying a layer of material over the chemical oxide layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
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19. A method for forming a reduced thickness oxide layer on a silicon wafer having an initial self terminating native, thermal or chemical oxide layer, comprising:
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determining the thickness of the initial oxide layer on the wafer;
applying a fluorinated process reagent to the initial oxide layer on the wafer for a time interval sufficient to thin the initial oxide layer by a desired amount; and
applying a layer of material onto the thinned oxide layer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method of manufacturing a microelectronic device on a silicon wafer comprising:
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applying a first fluorinated process reagent to the wafer, with the fluorinated process agent acting to remove a silicon dioxide film, having a thickness T1, from the wafer;
growing a self-terminating chemical oxide layer on the wafer by exposing the wafer to an oxidizer;
applying a second fluorinated process reagent to the chemical oxide layer on the wafer, with the second fluorinated process reagent etching the chemical oxide layer down to a thickness T2, with T2 less than T1; and
applying a high-K dielectric material on the chemical oxide layer.
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Specification