Amorphous high-k thin film and manufacturing method thereof

• US 20060180838A1
• Filed: 02/15/2006
• Published: 08/17/2006
• Est. Priority Date: 02/15/2005
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: Cho, Young-jin, Min, Yo-sep
• Granted Patent: US 7,379,322 B2
• Time in Patent Office: Days
• US Class Current: 257/295
• CPC Class Codes: C23C 16/40 Oxides
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]
• CPC Class Codes: C23C 16/45531 specially adapted for making ternary or higher compositions
• CPC Class Codes: H01L 21/02175 characterised by the metal H01L21/02197 takes precedence
• CPC Class Codes: H01L 21/02178 the material containing aluminium, e.g. Al2O3
• CPC Class Codes: H01L 21/02186 the material containing titanium, e.g. TiO2
• CPC Class Codes: H01L 21/02194 the material containing more than one metal element
• CPC Class Codes: H01L 21/02205 the layer being characterised by the precursor material for deposition
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/3141 Deposition using atomic layer deposition techniques [ALD]
• CPC Class Codes: H01L 21/31616 Deposition of Al2O3
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H01L 28/55 with a dielectric comprising a perovskite structure material

Abstract

An amorphous high-k thin film for a semiconductor device and a manufacturing method thereof are provided. The amorphous high-k thin film includes Bi, Ti, Al, and O. Since a BTAO based amorphous dielectric thin film is used as a dielectric material of a DRAM capacitor, a dielectric constant is more than 25, and an increase of a leakage current caused in reducing a physical thickness of the dielectric thin film can be prevented. Accordingly, it is very useful for the integration of the semiconductor device.

Claims

1. An amorphous high-k thin film for a memory device comprising Bi, Ti, Al, and O.

2. The amorphous high-k thin film of claim 1, wherein the amorphous high-k film is formed of Bi_1-x-yTi_yAl_yO, (0.2<

x<

0.5, 0<

y<

0.5, 1.5<

Z<

3).

3. A method of manufacturing an amorphous high-k thin film for a semiconductor device, the semiconductor device including a bottom structure, a dielectric thin film, and a top electrode, the method comprising:

forming the amorphous high-k film including Bi, Ti, Al, and O on the bottom structure.

4. The method of claim 3, wherein the amorphous high-k thin film is formed by an atomic layer deposition.

5. The method of claim 4, wherein when forming of the amorphous high-k thin film, single layers of Bi, Ti and Al are formed as precursors on the bottom structure and at least one of O₃ and H₂O is used as a reaction gas.

6. The method of claim 4, wherein the forming of the amorphous high-k thin film comprises:

forming Bi and Ti thin films as Bi and Ti precursors on the bottom structure, and performing oxidation to form Bi and Ti oxide film; and

forming an Al thin film as an Al precursor on the Bi and Ti oxide layers, and performing oxidation to form an Al oxide film.

7. The method of claim 3, wherein the amorphous high-k thin film is formed of Bi_1-x-yTi_yAl_yO, (0.2<

x<

0.5, 0<

y<

0.5, 1.5<

Z<

3).