Wide dynamic range operation for CMOS sensor with freeze-frame shutter

• US 20060181624A1
• Filed: 04/13/2006
• Published: 08/17/2006
• Est. Priority Date: 10/26/2000
• Status: Active Grant

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Krymski, Alexander I.
• Granted Patent: US 7,209,166 B2
• Time in Patent Office: Days
• US Class Current: 348/296
• CPC Class Codes: H04N 25/589 with different integration times, e.g. short and long exposures
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion
• CPC Class Codes: H04N 3/155 Control of the image-sensor operation, e.g. image processing within the image-sensor

Abstract

Wide dynamic range operation is used to write a signal in a freeze-frame pixel into the memory twice, first after short integration and then after long integration. The wide dynamic range operation allows the intra-scene dynamic range of images to be extended by combining the image taken with a short exposure time with the image taken with a long exposure time. A freeze-frame pixel is based on voltage sharing between the photodetector PD and the analog memory. Thus, with wide dynamic range operation, the resulting voltage in the memory may be a linear superposition of the two signals representing a bright and a dark image after two operations of sampling.

Claims

1-15. -15. (canceled)

16. A method of obtaining an image signal using a solid state sensor, the method comprising:

collecting a short image signal during a first time period;

sampling the short image signal after the first time period;

collecting a long image signal during a second time period;

sampling the long image signal after the second time period; and

combining the short image signal and the long image signal in a memory in the sensor to create a total image signal.

17. The method of claim 16, wherein the second time period includes the first time period.

18. The method of claim 16, further comprising resetting a photodetector in the sensor prior to collecting the short image signal.

19. The method of claim 16, further comprising resetting the memory containing the total image signal prior to collecting the short image signal.

22. The method of claim 16, wherein the memory is a capacitor.

24. The pixel of claim 16, wherein the second time period is longer than the first time period.

23. The method of claim 23, wherein the acts of collecting include operating a switch that selectively connects said capacitor to a photodetector.

25. A pixel sensor:

a photodetector having a first memory element;

a second memory element; and

a plurality of switches including;

a first switch constructed to connect the photodetector to a reset voltage source;

a second switch constructed to connect the photodetector to second memory element for permitting transfer of a first and a second image signal collected in the photodetector during a respective first and second collection time period; and

a third switch for connecting the second memory element to a reset voltage source, wherein the third switch is different than either the first or the second switch, and wherein the second memory element is constructed such that it is able to combine the first image signal and the second image signal to create a total image signal.

26. The pixel of claim 25, wherein the second time period includes the first time period.

27. The pixel of claim 25, further comprising a readout circuit to readout the total image signal from said second memory element.

28. The pixel of claim 25, wherein each of said first memory elements and said second memory elements comprise capacitors.

29. A method of operating an image sensor comprising:

resetting a capacitive structure by activating a first switch by connecting the capacitor to a reset voltage source;

resetting a photodetector of the image sensor by activating a second switch;

integrating charge at the photodetector during a first integration period to generate a first image signal;

transferring the first image signal from the photodetector to the capacitive structure by activating a third switch;

integrating charge at the photodetector during a second integration period to generate a second image signal;

transferring the second image signal from the photodetector to the capacitive structure by activating the third switch; and

creating a total image signal by combining the first and the second image signals in the capacitive structure.

30. The method of claim 29, further comprising reading out the total image signal through a readout circuit.