Film acoustically-coupled transformers with two reverse c-axis piezoelectric elements

• US 20060185139A1
• Filed: 04/14/2006
• Published: 08/24/2006
• Est. Priority Date: 10/30/2003
• Status: Active Grant

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Larson, John D. III, Oshmyansky, Yury
• Granted Patent: US 7,367,095 B2
• Time in Patent Office: Days
• US Class Current: 29/25.350
• CPC Class Codes: H03H 9/132 characterized by a particular shape
• CPC Class Codes: H03H 9/584 Coupled Resonator Filters [CFR]
• CPC Class Codes: H03H 9/587 Air-gaps
• CPC Class Codes: H03H 9/605 consisting of a ladder configuration
• CPC Class Codes: Y10T 29/42 Piezoelectric device making
• CPC Class Codes: Y10T 29/4902 Electromagnet, transformer or inductor
• CPC Class Codes: Y10T 29/49128 Assembling formed circuit to base
• CPC Class Codes: Y10T 29/49155 Manufacturing circuit on or in base

Abstract

Embodiments of an acoustically-coupled transformer have a first stacked bulk acoustic resonator (SBAR) and a second SBAR. Each of the SBARs has a lower film bulk acoustic resonator (FBAR) and an upper FBAR, and an acoustic decoupler between the FBARs. The upper FBAR is stacked atop the lower FBAR. Each FBAR has opposed planar electrodes and a piezoelectric element between the electrodes. The piezoelectric element is characterized by a c-axis. The c-axes of the piezoelectric elements of the lower FBARs are opposite in direction, and the c-axes of the piezoelectric elements of the upper FBARs are opposite in direction. The transformer additionally has a first electrical circuit connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR, and a second electrical circuit connecting the upper FBAR of the first SBAR to the upper FBARs of the second SBAR.

Claims

1. A method of making an acoustically-coupled transformer, the method comprising:

fabricating a first stacked bulk acoustic resonator (SBAR) and a second SBAR, the fabricating comprising;

forming lower film bulk acoustic resonators (FBARs) and upper FBARs, each of the FBARs comprising opposed planar electrodes and a piezoelectric element therebetween, the piezoelectric element characterized by a c-axis, the forming comprising setting the c-axes of the piezoelectric elements of the lower FBARs opposite in direction and setting the c-axes of the upper FBARs opposite in direction, and

locating an acoustic decoupler between the lower FBAR and the upper FBAR of each SBAR;

electrically connecting the lower FBAR of the first SBAR to the lower FBAR of the second SBAR; and

electrically connecting the upper FBAR of the first SBAR to the upper FBAR of the second SBAR.

2. The method of claim 1, in which:

the forming additionally comprises;

depositing and patterning a metal layer to define a pair of the electrodes, and

depositing a layer of piezoelectric material over the electrodes; and

the setting comprises depositing a seed layer of reverse c-axis piezoelectric material on one of the electrodes prior to depositing the layer of piezoelectric material.

3. The method of claim 2, in which depositing the seed layer comprises:

depositing the seed layer on the pair of electrodes; and

removing the seed layer from the other of the electrodes.

4. The method of claim 2, in which:

depositing the seed layer is performed under first deposition conditions that promote the formation of reverse c-axis material; and

depositing the layer of piezoelectric material is performed under second deposition conditions that promote the formation of normal c-axis material, the portion of the layer deposited on the seed layer being reverse c-axis material notwithstanding its deposition under the second deposition conditions.

5. The method of claim 4, in which the first deposition conditions comprise an oxygen-rich environment and the second deposition conditions comprise a nitrogen-rich environment.

6. The method of claim 1, in which:

the forming additionally comprises;

depositing and patterning a metal layer to define a pair of the electrodes; and

depositing a layer of piezoelectric material on the electrodes, the layer comprising a region of reverse c-axis material on one of the electrodes and a region of normal c-axis material on the other of the electrodes; and

the setting comprises depositing the regions using different deposition conditions.

7. The method of claim 6, in which depositing the layer of piezoelectric material comprises:

depositing a first layer under first deposition conditions to form one of (a) reverse c-axis piezoelectric material and (b) normal c-axis piezoelectric material;

removing a portion of the first layer to expose one of the electrodes; and

depositing a second layer under second deposition conditions to form the other of (a) reverse c-axis piezoelectric material and (b) normal c-axis piezoelectric material; and

removing a portion of the second layer to expose the first layer.

8. The method of claim 7, in which one of the deposition conditions comprises an oxygen-rich environment and the other of the deposition conditions comprises a nitrogen-rich environment.

9. The method of claim 7, in which the removing is performed by etching.

10. The method of claim 7, in which the removing is performed by a lift-off process.

11. The method of claim 1, in which:

the forming additionally comprises;

depositing a metal layer and patterning same to define a pair of first electrodes,

depositing a layer of ferroelectric material over the first electrodes, and

depositing an additional metal layer and patterning same to define a pair of second electrodes opposite the first electrodes; and

the setting comprises applying a poling voltage of a nominal polarity between one of the first electrodes and an opposed one of the second electrodes and applying a poling voltage of an opposite polarity between the other of the first electrodes and the other of the second electrodes;

12. The method of claim 11, in which:

the method additionally comprises;

providing a wafer, and

fabricating an array of the transformers on the wafer; and

the applying comprises electrically interconnecting corresponding ones of the electrodes of the transformers.

13. The method of claim 12, additionally comprising singulating the wafer to separate the transformers from one another, the singulating comprising severing the interconnections between the electrodes.