Process for manufacturing a triaxial piezoresistive accelerometer and relative pressure-monitoring device

• US 20060185428A1
• Filed: 01/24/2006
• Published: 08/24/2006
• Est. Priority Date: 01/25/2005
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: Combi, Chantal, Villa, Flavio Francesco, Baldo, Lorenzo, Faralli, Dino
• Granted Patent: US 7,322,236 B2
• Time in Patent Office: Days
• US Class Current: 73/146.400
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/123 by piezo-resistive elements, e.g. semiconductor strain gauges
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Abstract

A manufacturing process of a semiconductor piezoresistive accelerometer includes the steps of: providing a wafer of semiconductor material; providing a membrane in the wafer over a cavity; rigidly coupling an inertial mass to the membrane; and providing, in the wafer, piezoresistive transduction elements, that are sensitive to strains of the membrane and generate corresponding electrical signals. The step of coupling is carried out by forming the inertial mass on top of a surface of the membrane opposite to the cavity. The accelerometer is advantageously used in a device for monitoring the pressure of a tire of a vehicle.

Claims

1. A manufacturing process of a semiconductor piezoresistive accelerometer, comprising the steps of:

providing a wafer of semiconductor material;

providing a membrane in said wafer on top of a cavity;

coupling an inertial mass to said membrane; and

providing, in said wafer, piezoresistive transduction elements sensitive to strains of said membrane and generating corresponding electrical signals;

wherein said step of coupling comprises forming said inertial mass on top of a surface of said membrane opposite to said cavity.

2. The process according to claim 1, wherein said step of forming comprises the step of silk-screen printing said inertial mass directly on top of said surface.

3. The process according to claim 1, wherein said step of forming comprises depositing a welding paste of metal.

4. The process according to claim 3, wherein said metal is chosen in the group comprising silver, tin, copper, lead, and gold, and has a density higher than 7000 kg/m³.

5. The process according to claim 1, wherein said step of depositing comprises depositing said inertial mass substantially at the center of said membrane.

6. The process according to claim 1, wherein said cavity is a buried cavity that is formed during said step of providing the membrane.

7. The process according to claim 6, wherein said step of forming a buried cavity comprises the steps of:

digging trenches delimiting between them walls of semiconductor material;

epitaxially growing, starting from said walls, a closing layer of semiconductor material, said closing layer closing said trenches at the top and forming said membrane; and

carrying out a thermal treatment such as to cause migration of the semiconductor material of said walls and form said buried cavity.

8. The process according to claim 1, wherein said step of providing piezoresistive transduction elements comprises providing piezoresistors in a surface portion of said membrane;

said membrane having a first conductivity type and said step of providing piezoresistors comprising introducing ionic dopant species of a second conductivity type.

9. A semiconductor piezoresistive accelerometer, comprising:

a body of semiconductor material;

a cavity formed in said body;

a membrane formed in said body and suspended above said cavity;

an inertial mass fixedly coupled to said membrane; and

piezoresistive transduction elements integrated in said body, sensitive to strains of said membrane and generating corresponding electrical signals;

wherein said cavity is buried within said body of semiconductor material, and said inertial mass is arranged on top of a surface of said membrane opposite to said cavity.

10. The accelerometer according to claim 9, wherein said inertial mass comprises a welding paste of metal, deposited directly on top of said surface.

11. The accelerometer according to claim 10, wherein said metal is chosen in the group comprising silver, tin, copper, lead, and gold, and has a density higher than 7000 kg/m³.

12. The accelerometer according to claim 9, wherein said surface of said membrane defines a plane and has at least one principal dimension belonging to said plane, and said inertial mass has at least one respective principal dimension parallel to said plane;

and wherein a ratio between said principal dimensions of said inertial mass and of said membrane is comprised between 40% and 80%.

13. The accelerometer according to claim 9, wherein said inertial mass is set substantially at the center of said membrane.

14. The accelerometer according to claim 9, wherein said accelerometer is a triaxial accelerometer.

15. A pressure-monitoring device, comprising:

a pressure sensor;

an electronic circuit connected to said pressure sensor; and

an accelerometer connected to the electronic circuit, the accelerometer including;

a body of semiconductor material;

a cavity formed in said body;

a membrane formed in said body and suspended above said cavity;

an inertial mass fixedly coupled to said membrane; and

piezoresistive transduction elements integrated in said body, sensitive to strains of said membrane and generating corresponding electrical signals;

wherein said cavity is buried within said body of semiconductor material, and said inertial mass is arranged on top of a surface of said membrane opposite to said cavity.

16. The device according to claim 15, wherein said pressure sensor and said electronic circuit are integrated the body of semiconductor material.

17. The device according to claim 16, wherein said pressure sensor is made in a first region of said body and said accelerometer is made in a second region of said body;

said first region and said second region being both arranged in a surface portion of said body.

18. The device according to claim 16, wherein said pressure sensor is made in a first surface portion of said body and said accelerometer is made in a second surface portion of said body, opposite to said first surface portion.

19. An apparatus for monitoring an inflation pressure of a tire of a vehicle, comprising:

a pressure sensor;

an electronic circuit connected to said pressure sensor; and

an accelerometer connected to the electronic circuit, the accelerometer including;

a body of semiconductor material;

a cavity formed in said body;

a membrane formed in said body and suspended above said cavity;

an inertial mass fixedly coupled to said membrane; and

piezoresistive transduction elements integrated in said body, sensitive to strains of said membrane and generating corresponding electrical signals;

wherein said cavity is buried within said body of semiconductor material, and said inertial mass is arranged on top of a surface of said membrane opposite to said cavity, wherein said pressure sensor measures the inflation pressure of said tire, and said accelerometer measures a centrifugal acceleration caused by rotations of said tire.

20. The apparatus according to claim 19, wherein said pressure sensor and said electronic circuit are integrated the body of semiconductor material.

21. The apparatus according to claim 20, wherein said pressure sensor is made in a first region of said body and said accelerometer is made in a second region of said body;

said first region and said second region being both arranged in a surface portion of said body.

22. The apparatus according to claim 20, wherein said pressure sensor is made in a first surface portion of said body and said accelerometer is made in a second surface portion of said body, opposite to said first surface portion.