An Intelligent Integrated Sensor Of Tire Pressure Monitoring System (TPMS)

• US 20060185429A1
• Filed: 02/21/2005
• Published: 08/24/2006
• Est. Priority Date: 02/21/2005
• Status: Abandoned Application

• Current Assignee: FineMEMS Inc.
• Original Assignee: FineMEMS Inc.
• Inventors: Chen, Junjie, Liu, Sheng, Chen, Bin, Gan, Zhiyin
• Application Number:
  US10/906,444
• Publication Number:
  US 20060185429A1
• Time in Patent Office: Days
• US Class Current: 73/146.500
• CPC Class Codes: B60C 23/0408 transmitting the signals by non-mechanical means from the wheel or tyre to a vehicle body mounted receiver
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors

Abstract

A single integrated sensing chip with multi-functions for tire pressure monitor system (TPMS) comprises: a pressure sensor, an accelerometer, a temperature sensor, and an ASIC (Applied Specific Integrated Circuit) that implements signal conditioning and digitalizes pressure output. The accelerometer incorporated for vehicle motion is used to determine centrifugal acceleration or three-axial acceleration of the rotating wheel, and used for the TPMS sensor wake-up from “power down” mode, or when the velocity of the vehicle is higher than certain speed threshold, which is more robust and lower in cost than the mechanical vibration switch and is naturally integrated with the electronic control unit. The accelerometer can be used for regular motion sensing to monitor the dynamic stability. The integrated sensor system can be packaged into one plastic package first, and then surface mounted to the printed circuit board, or the multi-function single chip can be wafer bonded on the wafer level first and diced into many individual chips, with each chip being directly attached on to the printed circuit board by wire bonding or flip-chip assembly.

Claims

1. An integrated multi-functional sensing system for tire pressure monitor system (TPMS), comprising:

a pressure sensor, an accelerometer that monitors vehicle motion, LF transistors for initiazation of tire locations, and an ASIC that implements signal conditioning and digitalizes pressure output.

2. The monolithic chip of claim 1 is monolithically integrated or packaged with integrated circuit (IC) chips in a single plastic body, which has a specially designed mold and resin transfer molding process. The MEMS part of the pressure sensor is protected by silicon gel.

3. The pressure sensor of claim 1 can be fabricated using bulk micromachining. Multi-function features can be fabricated on the same die for TPMS sensing, with sensors being based on MEMS.

4. An accelerometer incorporated in claim 1 is used to determine centrifugal acceleration (z-axis) of the rotating wheel, used for the TPMS sensor wake-up from “

power down”

mode, or when the velocity of the vehicle is higher than certain speed threshold, and used for the regular motion measurement.

5. The accelerometer of claim 3 is fabricated with CMOS compatible MEMS. The accelerometer is a z-axis thermal accelerometer wafer level packaged by glass frit.

6. The z-axis signal in the accelerometer of claim 5 is extracted from the common mode voltage of the z, y axis signals. The z-axis signal is used for the TPMS sensor to respond from power down mode.

7. The chip of claim 4 can also be a bulk pressure sensor and accelerometer can be fabricated on the same die, both sensors are piezoresistive in nature.

8. The MEMS sensors of claim 3 are packaged in chip-on-board (COB) with the ASIC as an option, the substrate for the COB package may be FR4 material or ceramic substrate, according to the application.

9. COB in claim 8 can be in terms of three forms in claim 6:

wire bonding without glass or silicon stack, wire bonding with glass or silicon stack, and flip-chip and wafer bonded with the glass or silicon stack.

10. Wire bonding form without glass or silicon stack in claim 9 is for the low cost, with certain tolerance of zero point signal drifting, cycling signal drifting, and hysteresis from low temperature to high temperature.

11. Wire bonding form with the glass or silicon stack with certain height in claim 9 is for minimizing zero point signal drifting, cycling signal drifting, and hysteresis from low to high temperature.

12. Packaging form by flip-chip and wafer bonded with the glass or silicon stack in claim 9 is also for minimizing zero point signal drifting, cycling signal drifting, and hysteresis from low to high temperature.

13. Bonding layers or bumps above the PCB in claim 9 can be in soft adhesives or solders to minimize the additional packaging stresses on the sensing elements.

14. COB in claim 7 can be protected by a metal or ceramic cap or coated by a polymer layer such as parylene, etc.

15. The ASIC of claim 7 implements signal conditioning and trimming of the pressure sensor. The ASIC compensate the pressure sensor signal to a total error of less than ±

3% of FSO (Full Scale Output) with a temperature of minus 40 degrees to 125 degrees required by automotive industry. The ASIC is a mixed signal chip, the digital part of the chip is implemented by Verilog HDL language. The main part of the analog signal is an instrumentation amplifier.

16. The amplifier in the ASIC of claim 15 is a programmable amplifier, the offset and gain can be trimmed by polysilicon fuses, both have a resolution of 6 bits.

17. A temperature sensing function is integrated on the ASIC of claim 7. The temperature sensor is used for temperature compensation of pressure sensor, as well as for reporting the temperature of the tire.

18. A battery voltage sensing function is integrated on the ASIC of claim 7 when the battery is exhausted or is off. The sensor will provide a warning indication to the system.