Vertical batch processing apparatus

• US 20060185592A1
• Filed: 02/16/2006
• Published: 08/24/2006
• Est. Priority Date: 02/18/2005
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Matsuura, Hiroyuki
• Granted Patent: US 7,815,739 B2
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67757 vertical transfer of a batch of workpieces
• CPC Class Codes: Y10S 414/139 including wafer charging or discharging means for vacuum chamber
• CPC Class Codes: Y10S 414/14 Wafer cassette transporting

Abstract

A vertical batch processing apparatus is configured to transform a semiconductor oxide film on target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film. The apparatus includes a first process gas supply circuit having a first supply port disposed outside a process field to supply a first process gas, and a second process gas supply circuit having a second supply port disposed between the first supply port and the process field to supply a second process gas. A plasma generation field is disposed between the first and second supply ports to activate the first process gas to produce first active species. The first active species react with the second process gas and thereby produce a reactant to react with the semiconductor oxide film to form the intermediate film.

Claims

1. A vertical batch processing apparatus configured to transform a semiconductor oxide film on a plurality of target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film, the apparatus comprising:

a process container configured to form an airtight process field for accommodating the target objects;

a holder configured to support the target objects at intervals in a vertical direction within the process field;

a first process gas supply circuit comprising a first supply port disposed outside the process field, and configured to supply a first process gas to the process field through the first supply port;

a second process gas supply circuit comprising a second supply port disposed between the first supply port and the process field, and configured to supply a second process gas to the process field through the second supply port;

a plasma generation field disposed between the first supply port and the second supply port, and configured to activate the first process gas to produce first active species, wherein the first active species react with the second process gas and thereby produce a reactant to react with the semiconductor oxide film to form the intermediate film; and

an exhaust system comprising an exhaust port disposed opposite the second supply port with the process field interposed therebetween, and configured to vacuum-exhaust gas from the process field through the exhaust port.

2. The apparatus according to claim 1, wherein a supply head region is formed on a lateral side of the process field by a first wall portion integratedly attached to the process container, and the first active species are supplied from the supply head region to the process field.

3. The apparatus according to claim 2, wherein a rectifier plate is disposed between the supply head region and the process field to rectify a gas flow into a laminar flow state, and comprises a plurality of slits arrayed essentially over all the target objects in a vertical direction.

4. The apparatus according to claim 2, wherein an ion shield plate is disposed between the supply head region and the process field to prevent plasma from passing therethrough.

5. The apparatus according to claim 4, wherein the ion shield plate is configured to rectify a gas flow into a laminar flow state, and comprises a plurality of slits arrayed essentially over all the target objects in a vertical direction.

6. The apparatus according to claim 2, wherein the first supply port is disposed outside the supply head region, the plasma generation field is disposed between the first supply port and the supply head region, and the second supply port is opened into the supply head region.

7. The apparatus according to claim 2, wherein the first supply port is opened into the supply head region, the plasma generation field is disposed inside the supply head region, and the second supply port is disposed between the supply head region and the process field.

8. The apparatus according to claim 2, wherein an exhaust buffer region is formed on a lateral side of the process field by a second wall portion integratedly attached to the process container opposite the first wall portion, and the exhaust port is connected to the exhaust buffer region.

9. The apparatus according to claim 1, wherein the plasma generation field is configured to activate the first process gas by microwaves applied from a microwave generator.

10. The apparatus according to claim 9, wherein the microwaves have a frequency of 2.45 GHz or 400 MHz.

11. The apparatus according to claim 1, wherein the plasma generation field is configured to activate the first process gas by an RF power applied from an RF power supply.

12. The apparatus according to claim 11, wherein the RF power has a frequency of 13.56 MHz.

13. The apparatus according to claim 1, wherein the second supply port comprises a plurality of supply port portions arrayed essentially over all the target objects in a vertical direction.

14. The apparatus according to claim 1, wherein each of the process container and the holder is formed of a metal material covered with a corrosion resistant coating.

15. The apparatus according to claim 1, further comprising a cooling mechanism configured to cool the process container.

16. The apparatus according to claim 1, wherein the process container comprises a load port formed at a bottom, through which the holder with the target objects supported thereon is loaded and unloaded to and from process container, and a lid configured to airtightly close the load port.

17. The apparatus according to claim 16, further comprising a shutter member configured to cover the load port when the lid is removed.

18. The apparatus according to claim 1, wherein the process container comprises a vertically long load port formed in a sidewall, through which the target objects are loaded and unloaded to and from process container, and a slide door configured to airtightly close the load port.

19. The apparatus according to claim 1, wherein the first process gas comprises a gas containing nitrogen atoms and hydrogen atoms, and the second process gas comprises a gas containing a halogen element.

20. The apparatus according to claim 19, wherein the semiconductor oxide film comprises a silicon oxide film.

21. The apparatus according to claim 1, further comprising a heating mechanism configured to heat the target objects within the process field to decompose or sublimate the intermediate film.

22. The apparatus according to claim 21, wherein the heating mechanism comprises an inactive gas supply circuit configured to supply a heated inactive gas to the process field.

23. The apparatus according to claim 22, wherein the inactive gas supply circuit comprises a plurality of supply port portions for supplying the inactive gas, arrayed essentially over all the target objects in a vertical direction.

24. The apparatus according to claim 21, further comprising a temperature control mechanism selectively cool and heat the process container.

25. The apparatus according to claim 24, wherein the temperature control mechanism comprises a flow passage formed in a wall of the process container, and a member alternatively supply a cooling medium and a heating medium into the flow passage.

26. A semiconductor processing system comprising:

a casing configured to form a handling area in an airtight state;

a transfer port unit disposed on the casing to place thereon a transfer container for storing a plurality of target objects, the transfer port unit being configured to allow the transfer container to be opened to the handling area while maintaining an airtight state of the handling area;

a vertical batch main-processing apparatus connected to the casing to perform a semiconductor process on the target objects;

a vertical batch pre-processing apparatus connected to the casing to perform a pre-process on the target objects, the vertical batch pre-processing apparatus being configured to transform a semiconductor oxide film on the target objects into an intermediate film, which is decomposed or sublimated more easily than the semiconductor oxide film, so as to remove the semiconductor oxide film; and

a transfer mechanism disposed inside the handling area to directly or indirectly transfer the target objects between the transfer container, the vertical batch main-processing apparatus, and the vertical batch pre-processing apparatus,

wherein the vertical batch pre-processing apparatus comprises

a process container configured to form an airtight process field for accommodating the target objects,

a holder configured to support the target objects at intervals in a vertical direction within the process field,

a first process gas supply circuit comprising a first supply port disposed outside the process field, and configured to supply a first process gas to the process field through the first supply port,

a second process gas supply circuit comprising a second supply port disposed between the first supply port and the process field, and configured to supply a second process gas to the process field through the second supply port,

a plasma generation field disposed between the first supply port and the second supply port, and configured to activate the first process gas to produce first active species, wherein the first active species react with the second process gas and thereby produce a reactant to react with the semiconductor oxide film to form the intermediate film, and

an exhaust system comprising an exhaust port disposed opposite the second supply port with the process field interposed therebetween, and configured to vacuum-exhaust gas from the process field through the exhaust port.

27. The apparatus according to claim 26, wherein the vertical batch main-processing apparatus is configured to perform a film formation process as the semiconductor process.

28. The apparatus according to claim 26, wherein the vertical batch pre-processing apparatus further comprises a heating mechanism configured to heat the target objects within the process field to decompose or sublimate the intermediate film.

29. The apparatus according to claim 26, wherein the transfer mechanism comprises a target object transfer member configured to directly transfer the target objects, and a holder transfer member configured to transfer a holder for holding the target objects.

30. The apparatus according to claim 26, wherein the transfer port unit comprises a load-lock box that has openings on two sides provided with gate valves and is configured to adjust pressure therein.

31. The apparatus according to claim 26, wherein the casing is connected to a line for vacuum-exhausting gas from the handling area, and a line for supplying an inactive gas into the handling area.

32. The apparatus according to claim 26, wherein the handling area comprises a main-process area and a pre-process area connected through a connection port to be opened and closed by a partition door, the main-process area and the pre-process area are configured to adjust pressure therein independently of each other, the vertical batch main-processing apparatus is connected to the main-process area, and the vertical batch pre-processing apparatus is connected to the pre-process area.

33. The apparatus according to claim 26, wherein the vertical batch pre-processing apparatus is connected to a ceiling portion of the casing.

34. The apparatus according to claim 26, wherein the vertical batch pre-processing apparatus is connected to a sidewall of the casing.

35. The apparatus according to claim 26, wherein the vertical batch main-processing apparatus is connected to a ceiling portion of the casing.

36. The apparatus according to claim 26, further comprising a vertical batch heat-processing apparatus connected to the casing to heat the target objects to decompose or sublimate the intermediate film, wherein the vertical batch heat-processing apparatus comprises

a heat-process container configured to form an airtight heat-process field for accommodating the target objects at intervals in a vertical direction,

an exhaust system configured to vacuum-exhaust gas from the heat-process field,

an inner heater disposed inside the heat-process container and extending along the heat-process field, and

an outer heater disposed outside the heat-process container and extending along the heat-process field.

37. The apparatus according to claim 36, wherein the vertical batch heat-processing apparatus further comprises an inactive gas supply circuit configure to supply an inactive gas into the heat-process container.

38. The apparatus according to claim 36, wherein the inner heater comprises a plurality of carbon wire heaters having a U-shape disposed to extend in a longitudinal direction of the heat-process container.

39. The apparatus according to claim 36, wherein the heat-process container comprises a load port formed at a bottom, through which the target objects are loaded and unloaded to and from process container, and a lid configured to airtightly close the load port, and the vertical batch heat-processing apparatus further comprises a shutter member configured to cover the load port when the lid is removed.

40. The apparatus according to claim 36, wherein the heat-process field of the vertical batch heat-processing apparatus is configured to accommodate the holder of the vertical batch pre-processing apparatus, and the transfer mechanism comprises a holder transfer member configured to transfer the holder from the vertical batch pre-processing apparatus to the vertical batch heat-processing apparatus.