Oxynitride phosphor and semiconductor light-emitting device

• US 20060186377A1
• Filed: 02/22/2006
• Published: 08/24/2006
• Est. Priority Date: 02/22/2005
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), National Institute for Materials Science
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), National Institute for Materials Science
• Inventors: Hirosaki, Naoto, Takahashi, Kohsei
• Granted Patent: US 7,494,606 B2
• Time in Patent Office: Days
• US Class Current: 252/301.40F
• CPC Class Codes: C09K 11/77748 Silicon Aluminium Nitrides or Silicon Aluminium Oxynitrides
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/502 Wavelength conversion materials

Abstract

The invention provides an oxynitride phosphor represented by a composition formula M_1-aCe_aSi_bAl_cO_dN_e, wherein M denotes La or a compound of which main component is La and sub-component is at least one kind of element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu; the a that represents a composition ratio of Ce is a real number satisfying 0.1≦a≦1; the b that represents a composition ratio of Si is a real number satisfying b=(6−z)×f; the c that represents a composition ratio of Al is a real number satisfying c=(1+z)×g; the d that represents a composition ratio of O is a real number satisfying d=z×h; the e that represents a composition ratio of N is a real number satisfying e=(10−z)×i; the z is a real number satisfying 0.1≦z≦3; the f is a real number satisfying 0.7≦f≦1.3; the g is a real number satisfying 0.7≦g≦3; the h is a real number satisfying 0.7≦h≦3; the i is a real number satisfying 0.7≦i≦1.3; and a JEM phase is contained in an amount of 50% or more, and a semiconductor light-emitting device that uses the oxynitride phosphor.

Claims

1. An oxynitride phosphor represented by a composition formula M_1-aCe_aSi_bAl_cO_dN_e, wherein

M denotes La or a compound of which main component is La and sub-component is at least one kind of element selected from the group consisting of Pr, Nd, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb and Lu;

the a that represents a composition ratio of Ce is a real number satisfying 0.1≦

a≦

1;

the b that represents a composition ratio of Si is a real number satisfying b=(6−

z)×

f;

the c that represents a composition ratio of Al is a real number satisfying c=(1+z)×

g;

the d that represents a composition ratio of O is a real number satisfying d=z×

h;

the e that represents a composition ratio of N is a real number satisfying e=(10−

z)×

i;

the z is a real number satisfying 0.1≦

z≦

3;

the f is a real number satisfying 0.7≦

f≦

1.3;

the g is a real number satisfying 0.7≦

g≦

3;

the h is a real number satisfying 0.7≦

h≦

3;

the i is a real number satisfying 0.7≦

z≦

1.3; and

a JEM phase is contained in an amount of 50% or more.

2. The oxynitride phosphor of claim 1, wherein a JEM phase represented by a formula M_1-aCe_aAl(Si_6-zAl_z)N_10-zO_z is contained in an amount of 50% or more in the oxynitride phosphor.

3. The oxynitride phosphor of claim 1, wherein an emission peak wavelength is 460 nm or more and 510 nm or less.

4. The oxynitride phosphor of claim 1, wherein the JEM phase is contained by 70% or more and 90% or less.

5. The oxynitride phosphor of claim 1, wherein the d is a real number satisfying 1<

d≦

2 and the e is a real number satisfying 8<

e<

9.

6. A semiconductor light-emitting device, comprising:

a semiconductor light-emitting element that emits light of which emission peak wavelength is 370 nm or more and 420 nm or less; and

a first phosphor that is excited by light emitted from the semiconductor light-emitting element and of which emission peak wavelength is 460 nm or more and 510 nm or less;

wherein the first phosphor is an oxynitride phosphor of claim 1.

7. The semiconductor light-emitting device of claim 6, wherein a composition ratio a of Ce of the first phosphor satisfies 0.8≦

a≦

1, a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.22 or more and 0.44 or less, and a color coordinate y thereof is 0.22 or more and 0.44 or less.

8. The semiconductor light-emitting device of claim 6, wherein the semiconductor light-emitting element includes an InGaN active layer.

9. The semiconductor light-emitting device of claim 6, wherein an emission peak wavelength of the semiconductor light-emitting element is 390 nm or more and 420 nm or less.

10. The semiconductor light-emitting device of claim 6, wherein a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.22 or more and 0.44 or less, and a color coordinate y thereof is 0.22 or more and 0.44 or less, alternatively a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.36 or more and 0.5 or less, and a color coordinate y thereof is 0.33 or more and 0.46 or less.

11. A semiconductor light-emitting device, comprising:

a semiconductor light-emitting element that emits light of which emission peak wavelength is 370 nm or more and 420 nm or less;

a first phosphor that is excited by light emitted from the semiconductor light-emitting element and has an emission peak wavelength of 460 nm or more and 510 nm or less; and

a second phosphor that is excited by light emitted from the semiconductor light-emitting element and has an emission peak wavelength of 510 nm or more and 670 nm or less;

wherein the first phosphor is an oxynitride phosphor of claim 1.

12. The semiconductor light-emitting device of claim 11, wherein the second phosphor contains Si and N in a total amount of 50% by mole or more.

13. The semiconductor light-emitting device of claim 11, wherein the semiconductor light-emitting element includes an InGaN active layer.

14. The semiconductor light-emitting device of claim 11, wherein an emission peak wavelength of the semiconductor light-emitting element is 390 nm or more and 420 nm or less.

15. The semiconductor light-emitting device of claim 11, wherein a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.22 or more and 0.44 or less, and a color coordinate y thereof is 0.22 or more and 0.44 or less, alternatively a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.36 or more and 0.5 or less, and a color coordinate y thereof is 0.33 or more and 0.46 or less.

16. A semiconductor light-emitting device, comprising:

a semiconductor light-emitting element that emits light of which emission peak wavelength is 370 nm or more and 420 nm or less;

a first phosphor that is excited by light emitted from the semiconductor light-emitting element and has an emission peak wavelength of 460 nm or more and 510 nm or less;

a second phosphor that is excited by light emitted from the semiconductor light-emitting element and has an emission peak wavelength of 600 nm or more and 670 nm or less; and

a third phosphor that is excited by light emitted from the semiconductor light-emitting element and has an emission peak wavelength of 510 nm or more and 550 nm or less;

wherein the first phosphor is an oxynitride phosphor of claim 1;

and

at least one of the second and third phosphors contains Si and N in a total amount of 50% by mole or more.

17. The semiconductor light-emitting device of claim 16, wherein the semiconductor light-emitting element includes an InGaN active layer.

18. The semiconductor light-emitting device of claim 16, wherein an emission peak wavelength of the semiconductor light-emitting element is 390 nm or more and 420 nm or less.

19. The semiconductor light-emitting device of claim 16, wherein a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.22 or more and 0.44 or less, and a color coordinate y thereof is 0.22 or more and 0.44 or less, alternatively a color coordinate x of an emission color of emission from the semiconductor light-emitting device is 0.36 or more and 0.5 or less, and a color coordinate y thereof is 0.33 or more and 0.46 or less.