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High reflectivity p-contacts for group lll-nitride light emitting diodes

  • US 20060186552A1
  • Filed: 03/23/2006
  • Published: 08/24/2006
  • Est. Priority Date: 04/07/2004
  • Status: Abandoned Application
First Claim
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1. A flip-chip LED device comprising:

  • a plurality of group III-nitride semiconductor layers defining a p/n junction and including a top p-type group III-nitride layer; and

    a p-contact for flip-chip bonding the top p-type group III-nitride layer, the p-contact including;

    an aluminum layer disposed on the top p-type group III-nitride layer, and an interface layer disposed between the aluminum layer and the top p-type group III-nitride layer and reducing a contact resistance therebetween, the interface layer comprising one or more group III-nitride layers.

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