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Semiconductor device and method for manufacturing the same

  • US 20060186804A1
  • Filed: 02/10/2006
  • Published: 08/24/2006
  • Est. Priority Date: 02/18/2005
  • Status: Active Grant
First Claim
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1. A light emitting device comprising:

  • a substrate having an insulating surface;

    a semiconductor layer of a thin film transistor over the substrate;

    a first electrode directly connected to the semiconductor layer;

    an insulator covering an end portion of the first electrode;

    a buffer layer over the first electrode;

    a layer containing an organic compound over the buffer layer; and

    a second electrode over the layer containing an organic compound, wherein the first electrode has a first region and a second region having a different number of layers from the first region, a step is formed between the first region and the second region, and the step is covered with the insulator.

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