Semiconductor device and method for manufacturing the same

• US 20060186804A1
• Filed: 02/10/2006
• Published: 08/24/2006
• Est. Priority Date: 02/18/2005
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kuwabara, Hideaki, Noda, Takeshi, Yamazaki, Shunpei, Sakakura, Masayuki
• Granted Patent: US 7,948,171 B2
• Time in Patent Office: Days
• US Class Current: 313/506
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 50/155 comprising dopants
• CPC Class Codes: H10K 50/81 Anodes
• CPC Class Codes: H10K 50/813 characterised by their shape
• CPC Class Codes: H10K 50/818 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/123 Connection of the pixel electrodes to the thin film transistors [TFT]
• CPC Class Codes: H10K 59/38 comprising colour filters or colour changing media [CCM]
• CPC Class Codes: H10K 59/80515 characterised by their shape
• CPC Class Codes: H10K 59/80518 Reflective anodes, e.g. ITO combined with thick metallic layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

A manufacturing method of an active matrix light emitting device in which the active matrix light emitting device can be manufactured in a shorter time with high yield at low cost compared with conventional ones will be provided. It is a feature of the present invention that a layered structure is employed for a metal electrode which is formed in contact with or is electrically connected to a semiconductor layer of each TFT arranged in a pixel area of an active matrix light emitting device. Further, the metal electrode is partially etched and used as a first electrode of a light emitting element. A buffer layer, a layer containing an organic compound, and a second electrode layer are stacked over the first electrode.

Claims

1. A light emitting device comprising:

a substrate having an insulating surface;

a semiconductor layer of a thin film transistor over the substrate;

a first electrode directly connected to the semiconductor layer;

an insulator covering an end portion of the first electrode;

a buffer layer over the first electrode;

a layer containing an organic compound over the buffer layer; and

a second electrode over the layer containing an organic compound,

wherein the first electrode has a first region and a second region having a different number of layers from the first region,

a step is formed between the first region and the second region, and

the step is covered with the insulator.

2. A light emitting device according to claim 1,

wherein the buffer layer is provided in contact with the first region of the first electrode.

3. A light emitting device according to claim 1,

wherein the first electrode includes a first region having a metal film including two layers and a second region having a metal film including four layers.

4. A light emitting device according to claim 1,

wherein the first electrode includes a first region having a metal film including two layers and a second region having a metal film including three layers.

5. A light emitting device according to claim 1,

wherein the first electrode includes a first region having a single layer metal film and a second region having a metal film including two or more layers.

6. A light emitting device according to claim 1,

wherein the first electrode has a film mainly containing an element selected from the group consisting of Ti, TiN, TiSi_XN_Y, Al, Ag, Ni, W, WSi_X, WN_X, WSi_XN_Y, Ta, TaN_X, TaSi_XN_Y, NbN, MoN, Cr, Pt, Zn, Sn, In, and Mo;

or an alloy or a compound mainly containing the above element;

or a stack of the films.

7. A light emitting device according to claim 1,

wherein area of a light emitting area of one light emitting element is smaller than area of the first region.

8. A light emitting device according to claim 1,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound shows electron accepting characteristics with respect to the organic compound.

9. A light emitting device according to claim 1,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound is one or more selected from the group consisting of titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

10. A light emitting device according to claim 1,

wherein the buffer layer includes a composite material containing an organic compound having hole transporting characteristics and an inorganic compound.

11. A light emitting device according to claim 1,

wherein the second electrode is a light-transmitting conductive film.

12. A light emitting device according to claim 1,

wherein the light emitting device is a video camera, a digital camera, a navigation system, a personal computer, a game machine, or an information terminal.

13. A light emitting device comprising:

a substrate having an insulating surface;

a semiconductor layer of a thin film transistor over the substrate;

a first electrode electrically connected to the semiconductor layer;

an insulator covering an end portion of the first electrode;

a buffer layer over the first electrode;

a layer containing an organic compound over the buffer layer; and

a second electrode over the layer containing an organic compound,

wherein the first electrode has a first region and a second region having different number of layers from the first region,

a step is formed between the first region and the second region, and

the step is covered with the insulator.

14. A light emitting device according to claim 13,

wherein the light emitting device includes a pixel area provided with a plurality of light emitting elements and a driver circuit having a plurality of thin film transistors, and the driver circuit includes a wiring having a same stack as the second region.

15. A light emitting device according to claim 13,

wherein the buffer layer is provided in contact with the first region of the first electrode.

16. A light emitting device according to claim 13,

wherein the first electrode includes a first region having a metal film including two layers and a second region having a metal film including four layers.

17. A light emitting device according to claim 13,

wherein the first electrode includes a first region having a metal film including two layers and a second region having a metal film including three layers.

18. A light emitting device according to claim 13,

wherein the first electrode includes a first region having a single layer metal film and a second region having a metal film including two or more layers.

19. A light emitting device according to claim 13,

wherein the first electrode has a film mainly containing an element selected from the group consisting of Ti, TiN, TiSi_XN_Y, Al, Ag, Ni, W, WSi_X, WN_X, WSi_XN_Y, Ta, TaN_X, TaSi_XN_Y, NbN, MoN, Cr, Pt, Zn, Sn, In, and Mo;

or an alloy or a compound mainly containing the above element;

or a stack of the films.

20. A light emitting device according to claim 13,

wherein area of a light emitting area of one light emitting element is smaller than area of the first region.

21. A light emitting device according to claim 13,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound shows electron accepting characteristics with respect to the organic compound.

22. A light emitting device according to claim 13,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound is one or more selected from the group consisting of titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

23. A light emitting device according to claim 13,

wherein the buffer layer includes a composite material containing an organic compound having hole transporting characteristics and an inorganic compound.

24. A light emitting device according to claim 13,

wherein the second electrode is a light-transmitting conductive film.

25. A light emitting device according to claim 13,

wherein the light emitting device is a video camera, a digital camera, a navigation system, a personal computer, a game machine, or an information terminal.

26. A method for manufacturing a light emitting device including a plurality of light emitting elements comprising the steps of:

forming a semiconductor layer of a thin film transistor;

forming an insulating film covering the semiconductor layer of the thin film transistor;

forming an electrode formed with a stack of metal layers in contact with the semiconductor layer of the thin film transistor, over the insulating film;

removing a part of the stack of the electrode to form a first electrode including a first region, a second region having more layers than the first region, and a step between the first region and the second region;

forming an insulator covering the step and the second region of the first electrode;

forming a buffer layer in contact with the first region;

forming a layer containing an organic compound over the buffer layer; and

forming a second electrode which transmits light over the layer containing an organic compound.

27. A method for manufacturing a light emitting device according to claim 26,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound shows electron accepting characteristics with respect to the organic compound.

28. A method for manufacturing a light emitting device according to claim 26,

wherein the buffer layer includes a composite material of an organic compound and an inorganic compound, and

the inorganic compound is one or more selected from the group consisting of titanium oxide, zirconium oxide, hafnium oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide, tungsten oxide, manganese oxide, and rhenium oxide.

29. A light emitting device according to claim 26,

wherein the buffer layer includes a composite material containing an organic compound having hole transporting characteristics and an inorganic compound.

30. A method for manufacturing a light emitting device including a plurality of light emitting elements comprising the steps of:

forming a semiconductor layer of a thin film transistor;

forming an insulating film covering the semiconductor layer of the thin film transistor;

forming an electrode formed with a stack of metal layers in contact with the semiconductor layer of the thin film transistor, over the insulating film;

removing a part of the stack of the electrode to form a first electrode including a first region, a second region having more layers than the first region, and a step between the first region and the second region;

forming an insulator covering the step and the second region of the first electrode;

forming a buffer layer in contact with the first region by moving the substrate in a film formation chamber while moving a first evaporation source in a direction perpendicular to the moving direction of the substrate;

forming a layer containing an organic compound over the buffer layer by moving the substrate in the film formation chamber while moving a second evaporation source in a direction perpendicular to the moving direction of the substrate; and

forming the second electrode which transmits light over the layer containing an organic compound.

31. A method for manufacturing a light emitting device including a plurality of light emitting elements comprising the steps of:

forming a first electrode over a substrate having an insulating surface;

forming a layer containing an organic compound over the first electrode by moving the substrate in a film formation chamber while moving an evaporation source in a direction perpendicular to the moving direction of the substrate; and

forming a second electrode over the layer containing an organic compound.

32. A deposition apparatus comprising:

means for moving a substrate in a first direction in a film formation chamber;

a deposition shield which can control heating temperature, which is fixed to an internal wall of the film formation chamber;

an evaporation source under the deposition shield; and

means for moving the evaporation source in a second direction perpendicular to the first direction,

wherein the deposition shield has a rectangular shape having a wider width than the substrate,

a plurality of openings are provided on a top surface of the deposition shield, and

a deposition material evaporated from the evaporation source is deposited to the substrate through the plurality of openings provided on the deposition shield.

33. A deposition apparatus according to claim 32,

wherein the deposition apparatus is connected between two treatment chambers of an inline manufacturing apparatus.

34. A deposition apparatus according to claim 32,

wherein the deposition apparatus is connected to a transport chambers of a multi-chamber manufacturing apparatus.