Method of processing substrate, post-chemical mechanical polishing cleaning method, and method of and program for manufacturing electronic device
First Claim
1. A method of processing a substrate having thereon an insulating film that has been revealed by chemical mechanical polishing, the method comprising:
- an insulating film exposure step of exposing the revealed insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
an insulating film heating step of heating to a predetermined temperature the insulating film that has been exposed to the atmosphere of the mixed gas.
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Accused Products
Abstract
A method of processing a substrate which enables a surface damaged layer and polishing remnants on the surface of an insulating film to be removed, and enable the amount removed of the surface damaged layer and polishing remnants to be controlled easily. An insulating film on a substrate, which has been revealed by chemical mechanical polishing, is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The insulating film which has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
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Citations
20 Claims
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1. A method of processing a substrate having thereon an insulating film that has been revealed by chemical mechanical polishing, the method comprising:
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an insulating film exposure step of exposing the revealed insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
an insulating film heating step of heating to a predetermined temperature the insulating film that has been exposed to the atmosphere of the mixed gas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A post-chemical mechanical polishing cleaning method carried out on a substrate after a conductive film formed on an insulating film formed on a surface of the substrate has been polished away by chemical mechanical polishing, the method comprising:
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an insulating film exposure step of exposing the insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
an insulating film heating step of heating to a predetermined temperature the insulating film that has been exposed to the atmosphere of the mixed gas. - View Dependent Claims (12)
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13. A method of manufacturing an electronic device, the method comprising:
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a wiring formation step of forming wiring made of a first conductive material in a first insulating film that has been formed on a surface of a semiconductor substrate;
a second insulating film formation step of forming a second insulating film on the first insulating film so as to cover the wiring;
a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed second insulating film;
a plasma fabrication step of fabricating a connecting hole reaching the wiring in the second insulating film by plasma processing using the formed photoresist layer;
an ashing step of removing the photoresist layer;
a connecting hole filling step of forming a conductive film made of a second conductive material on the second insulating film so as to fill the connecting hole with the second conductive material;
a conductive film polishing step of polishing away the formed conductive film by chemical mechanical polishing;
a second insulating film exposure step of exposing the second insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a second insulating film heating step of heating to a predetermined temperature the second insulating film that has been exposed to the atmosphere of the mixed gas. - View Dependent Claims (14, 15)
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16. A method of manufacturing an electronic device, the method comprising:
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a wiring formation step of forming wiring made of a first conductive material in a first insulating film that has been formed on a surface of a semiconductor substrate;
a second insulating film formation step of forming a second insulating film on the first insulating film so as to cover the wiring;
a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed second insulating film;
a plasma fabrication step of fabricating a connecting hole reaching the wiring in the second insulating film by plasma processing using the formed photoresist layer;
a connecting hole filling step of forming a conductive film made of a second conductive material on the second insulating film so as to fill the connecting hole with the second conductive material;
a conductive film polishing step of polishing away the photoresist layer and the formed conductive film by chemical mechanical polishing;
a second insulating film exposure step of exposing the second insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a second insulating film heating step of heating to a predetermined temperature the second insulating film that has been exposed to the atmosphere of the mixed gas.
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17. A program for causing a computer to execute a method of processing a substrate having thereon an insulating film that has been revealed by chemical mechanical polishing, the program comprising:
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an insulating film exposure module for exposing the revealed insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
an insulating film heating module for heating to a predetermined temperature the insulating film that has been exposed to the atmosphere of the mixed gas.
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18. A program for causing a computer to execute a post-chemical mechanical polishing cleaning method carried out on a substrate after a conductive film formed on an insulating film formed on a surface of the substrate has been polished away by chemical mechanical polishing, the program comprising:
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an insulating film exposure module for exposing the insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
an insulating film heating module for heating to a predetermined temperature the insulating film that has been exposed to the atmosphere of the mixed gas.
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19. A program for causing a computer to execute a method of manufacturing an electronic device, the program comprising:
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a wiring formation module for forming wiring made of a first conductive material in a first insulating film that has been formed on a surface of a semiconductor substrate;
a second insulating film formation module for forming a second insulating film on the first insulating film so as to cover the wiring;
a photoresist layer formation module for forming a photoresist layer in a predetermined pattern on the formed second insulating film;
a plasma fabrication module for fabricating a connecting hole reaching the wiring in the second insulating film by plasma processing using the formed photoresist layer;
an ashing module for removing the photoresist layer;
a connecting hole filling module for forming a conductive film made of a second conductive material on the second insulating film so as to fill the connecting hole with the second conductive material;
a conductive film polishing module for polishing away the formed conductive film by chemical mechanical polishing;
a second insulating film exposure module for exposing the second insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a second insulating film heating module for heating to a predetermined temperature the second insulating film that has been exposed to the atmosphere of the mixed gas.
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20. A program for causing a computer to execute a method of manufacturing an electronic device, the program comprising:
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a wiring formation module for forming wiring made of a first conductive material in a first insulating film that has been formed on a surface of a semiconductor substrate;
a second insulating film formation module for forming a second insulating film on the first insulating film so as to cover the wiring;
a photoresist layer formation module for forming a photoresist layer in a predetermined pattern on the formed second insulating film;
a plasma fabrication module for fabricating a connecting hole reaching the wiring in the second insulating film by plasma processing using the formed photoresist layer;
a connecting hole filling module for forming a conductive film made of a second conductive material on the second insulating film so as to fill the connecting hole with the second conductive material;
a conductive film polishing module for polishing away the photoresist layer and the formed conductive film by chemical mechanical polishing;
a second insulating film exposure module for exposing the second insulating film, which has been revealed through the chemical mechanical polishing, to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a second insulating film heating module for heating to a predetermined temperature the second insulating film that has been exposed to the atmosphere of the mixed gas.
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Specification