Adhesion improvement for low k dielectrics
First Claim
1. A method for processing a substrate, comprising:
- positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon;
introducing a pretreatment gas into the processing chamber, wherein the pretreatment gas comprises an oxidizing gas, an inert gas, or combinations thereof;
generating a plasma of the pretreatment gas to modify a surface of the barrier layer;
introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas; and
depositing a first dielectric layer on the substrate, wherein the dielectric layer comprises silicon, oxygen, and carbon.
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Abstract
Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
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Citations
20 Claims
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1. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon;
introducing a pretreatment gas into the processing chamber, wherein the pretreatment gas comprises an oxidizing gas, an inert gas, or combinations thereof;
generating a plasma of the pretreatment gas to modify a surface of the barrier layer;
introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas; and
depositing a first dielectric layer on the substrate, wherein the dielectric layer comprises silicon, oxygen, and carbon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising silicon, nitrogen, and carbon;
introducing an inert gas into the processing chamber;
generating a first plasma from a single-frequency RF power source to modify a surface of the barrier layer;
introducing an organosilicon compound and an oxidizing gas at a ratio of greater than or equal to about 10;
1 into the processing chamber; and
depositing a first dielectric layer on the substrate, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less. - View Dependent Claims (11, 12, 13)
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14. A method for processing a substrate, comprising:
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positioning the substrate in a processing chamber, wherein the substrate has a barrier layer comprising at least silicon and carbon;
introducing an oxidizing gas into the processing chamber;
generating a plasma of the oxidizing gas and treating a surface of the barrier layer;
introducing an organosilicon compound at a first flow rate;
depositing a first dielectric layer on the substrate from the oxidizing gas and the organosilicon compound, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification