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Method of cleaning etching apparatus

  • US 20060191555A1
  • Filed: 08/15/2005
  • Published: 08/31/2006
  • Est. Priority Date: 02/28/2005
  • Status: Active Grant
First Claim
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1. A method of cleaning an etching apparatus that conducts etching of a film to be etched made of a stack of any one layer or more than one layers of gold (Au), platinum (Pt), silver (Ag), titanium (Ti), titanium nitride (TiN), titanium oxide (TiO), aluminum (Al) or an aluminum alloy using as an etching gas a mixed gas produced by adding at least one of methane (CH4), ethane (C2H6), acetylene (C2H2), dichloromethane (CH2Cl2), dibromomethane (CH2Br2), chloromethane (CH3Cl), bromomethane (CH3Br) and fluoromethane (CH3F) to at least one of chlorine (Cl2), boron trichloride (BCl3) and hydrogen bromide (HBr), wherein each time etching of the film to be etched is completed, the substrate (wafer) on which the film to be etched is formed is replaced with a dummy substrate, and a plasma is produced, thereby cleaning the interior of a process chamber.

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