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Field effect transistors with vertically oriented gate electrodes and methods for fabricating the same

  • US 20060192249A1
  • Filed: 04/03/2006
  • Published: 08/31/2006
  • Est. Priority Date: 09/20/2004
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor layer;

    a first transistor in a first region of the semiconductor layer, the first transistor comprising;

    a gate electrode that extends into the semiconductor layer in a vertical direction;

    a source region and a drain region in the semiconductor layer arranged at opposite sides of the gate electrode in a horizontal direction; and

    a lateral channel region of the semiconductor layer at a side of the gate electrode in a lateral direction that extends in the horizontal direction between the source region and the drain region; and

    a second transistor in a second region of the semiconductor layer, the second transistor comprising a planar transistor.

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