Light-emitting diode device and method of manufacturing thereof

• US 20060193121A1
• Filed: 02/28/2006
• Published: 08/31/2006
• Est. Priority Date: 02/28/2005
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kamoshita, Shohichi
• Application Number:
  US11/365,560
• Publication Number:
  US 20060193121A1
• Time in Patent Office: Days
• US Class Current: 362/84
• CPC Class Codes: G02F 1/133603 with LEDs
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48257 connecting the wire to a die pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/10155 being other than a cuboid
• CPC Class Codes: H01L 2924/10157 at the active surface
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

An LED device that is excellent in color mixture and small in variation of chromaticity is provided. The LED device includes, in a package, an LED chip, a fluorescent material excited by light from the LED chip to generate light with a wavelength different from that of the light from the LED chip, and a translucent resin holding the fluorescent material. The LED chip has a side-surface portion, a top-surface portion, a bottom-surface portion, and a light-emitting layer sandwiched between the top-surface portion and the bottom-surface portion, and the fluorescent material in the translucent resin is provided in a layer form on a bottom surface of the package to entirely or partially cover the side-surface portion of the LED chip.

Claims

1. A light-emitting diode device comprising, in a package:

a light-emitting diode chip;

a fluorescent material excited by light from the light-emitting diode chip to generate light with a wavelength different from that of the light from the light-emitting diode chip; and

a translucent resin holding the fluorescent material, wherein

said light-emitting diode chip includes a side-surface portion, a top-surface portion, a bottom-surface portion, and a light-emitting layer sandwiched between the top-surface portion and the bottom-surface portion, and

said fluorescent material in the translucent resin is provided in a layer form on a bottom surface of the package to entirely or partially cover the side-surface portion of the light-emitting diode chip.

2. The light-emitting diode device according to claim 1, wherein

said light-emitting diode chip has said side-surface portion with an inclined surface so that said light-emitting diode chip is convex toward an opening of the package.

3. The light-emitting diode device according to claim 2, wherein

said inclined surface of the light-emitting diode chip is located closer to the opening of the package relative to the light-emitting layer of the light-emitting diode chip.

4. The light-emitting diode device according to claim 1, wherein

said fluorescent material is in a form of particles and the size of the particles is selected to be within a range of ±

50% of the median of the particle size of the particles.

5. The light-emitting diode device according to claim 1, wherein

said fluorescent material is comprised of at least two types of fluorescent material emitting light with respective wavelengths different from each other by the light from the light-emitting diode chip.

18. A method of manufacturing the light-emitting diode device as recited in claim 1, comprising the steps of:

injecting a translucent resin including a fluorescent material into a package;

applying vibrations to said package to form a flat layer including the fluorescent material on a bottom surface of the package; and

heating to cure said translucent resin.

19. The method of manufacturing the light-emitting diode device according to claim 18, wherein

said step of injecting the translucent resin including the fluorescent material into the package includes the steps of:

leaving an injection container filled with said fluorescent material and said translucent resin in a stationary state to allow the fluorescent material to settle in the translucent resin; and

injecting said translucent resin including the settling fluorescent material into the package.

6. A light-emitting diode device comprising, in a package:

a light-emitting diode chip;

a fluorescent material excited by light from the light-emitting diode chip to generate light with a wavelength different from that of the light from the light-emitting diode chip; and

a translucent resin holding the fluorescent material, wherein

said light-emitting diode chip includes a side-surface portion, a top-surface portion, a bottom-surface portion, and a light-emitting layer sandwiched between the top-surface portion and the bottom-surface portion, and

said fluorescent material in the translucent resin is provided on a bottom surface of the package and in a layer form with a uniform thickness from the bottom surface.

7. The light-emitting diode device according to claim 6, wherein

said light-emitting diode chip has said side-surface portion with an inclined surface so that light-emitting diode chip is convex toward an opening of the package.

8. The light-emitting diode device according to claim 7, wherein

said inclined surface of the light-emitting diode chip is located closer to the opening of the package relative to the light-emitting layer of the light-emitting diode chip.

9. The light-emitting diode device according to claim 6, wherein

said fluorescent material is in a form of particles and the size of the particles is selected to be within a range of ±

50% of the median of the particle size of the particles.

10. The light-emitting diode device according to claim 6, wherein

said fluorescent material is comprised of at least two types of fluorescent material emitting light with respective wavelengths different from each other by the light from the light-emitting diode chip.

11. The light-emitting diode device according to claim 6, wherein

the layer including said fluorescent material in the translucent resin has its thickness smaller than the thickness from the bottom-surface portion to the top-surface portion of said light-emitting diode chip and larger than the thickness from the bottom-surface portion to the light-emitting layer of said light-emitting diode chip.

20. A method of manufacturing the light-emitting diode device as recited in claim 6, comprising the steps of:

injecting a translucent resin including a fluorescent material into a package;

applying vibrations to said package to form a flat layer including the fluorescent material on a bottom surface of the package; and

heating to cure said translucent resin.

21. The method of manufacturing the light-emitting diode device according to claim 20, wherein

said step of injecting the translucent resin including the fluorescent material into the package includes the steps of:

leaving an injection container filled with said fluorescent material and said translucent resin in a stationary state to allow the fluorescent material to settle in the translucent resin; and

injecting said translucent resin including the settling fluorescent material into the package.

12. A light-emitting diode device comprising, in a package:

a light-emitting diode chip;

a fluorescent material excited by light from the light-emitting diode chip to generate light with a wavelength different from that of the light from the light-emitting diode chip; and

a translucent resin filling the package, wherein

said light-emitting diode chip includes a side-surface portion, a top-surface portion, a bottom-surface portion, and a light-emitting layer sandwiched between the top-surface portion and the bottom-surface portion, and

said translucent resin includes one translucent resin layer provided on the bottom surface of said package and in a layer form and containing a fluorescent material and another translucent resin layer provided adjacent to the translucent resin layer and closer to an opening of the package and containing no fluorescent material.

13. The light-emitting diode device according to claim 12, wherein

said light-emitting diode chip has said side-surface portion with an inclined surface so that said light-emitting diode chip is convex toward an opening of the package.

14. The light-emitting diode device according to claim 13, wherein

said inclined surface of the light-emitting diode chip is located closer to the opening of the package relative to the light-emitting layer of the light-emitting diode chip.

15. The light-emitting diode device according to claim 12, wherein

said fluorescent material is in a form of particles and the size of the particles is selected to be within a range of ±

50% of the median of the particle size of the particles.

16. The light-emitting diode device according to claim 12, wherein

said fluorescent material is comprised of at least two types of fluorescent material emitting light with respective wavelengths different from each other by the light from the light-emitting diode chip.

17. The light-emitting diode device according to claim 12, wherein

the layer including said fluorescent material in the translucent resin has its thickness smaller than the thickness from the bottom-surface portion to the top-surface portion of said light-emitting diode chip and larger than the thickness from the bottom-surface portion to the light-emitting layer of said light-emitting diode chip.

22. A method of manufacturing the light-emitting diode device as recited in claim 12, comprising the steps of:

injecting a translucent resin including a fluorescent material into a package;

applying vibrations to said package to form a flat layer including the fluorescent material on a bottom surface of the package; and

heating to cure said translucent resin.

23. The method of manufacturing the light-emitting diode device according to claim 22, wherein

said step of injecting the translucent resin including the fluorescent material into the package includes the steps of:

leaving an injection container filled with said fluorescent material and said translucent resin in a stationary state to allow the fluorescent material to settle in the translucent resin; and

injecting said translucent resin including the settling fluorescent material into the package.