Method of processing substrate, and method of and program for manufacturing electronic device
First Claim
1. A method of processing a substrate having a carbon-containing low dielectric constant insulating film thereon, the low dielectric constant insulating film having a surface damaged layer having a reduced carbon concentration, the method comprising:
- a surface damaged layer exposure step of exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a surface damaged layer heating step of heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of processing a substrate that enables the amount removed of a surface damaged layer to be controlled easily, and enable a decrease in wiring reliability to be prevented. A surface damaged layer having a reduced carbon concentration of a carbon-containing low dielectric constant insulating film on a substrate is exposed to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure. The surface damaged layer that has been exposed to the atmosphere of the mixed gas is heated to a predetermined temperature.
62 Citations
16 Claims
-
1. A method of processing a substrate having a carbon-containing low dielectric constant insulating film thereon, the low dielectric constant insulating film having a surface damaged layer having a reduced carbon concentration, the method comprising:
-
a surface damaged layer exposure step of exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a surface damaged layer heating step of heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas. - View Dependent Claims (2, 3, 4, 5, 6)
-
-
7. A method of processing a substrate having thereon a mask film comprising at least one of a photoresist film and a hard mask film, the mask film having a surface damaged layer, the method comprising:
-
a surface damaged layer exposure step of exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a surface damaged layer heating step of heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.
-
-
8. A method of manufacturing an electronic device, comprising:
-
a low dielectric constant insulating film formation step of forming a carbon-containing low dielectric constant insulating film on a capacitor comprising a lower electrode, a capacitive insulating film and an upper electrode that has been formed on a semiconductor substrate;
a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;
a plasma fabrication step of fabricating a connecting hole reaching the upper electrode in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;
a connecting hole surface exposure step of exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a connecting hole surface heating step of heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas.
-
-
9. A method of manufacturing an electronic device, comprising:
-
an interlayer insulating film formation step of forming a carbon-containing low dielectric constant insulating film on a semiconductor substrate, and forming an other insulating film having a lower carbon concentration than the low dielectric constant insulating film on the low dielectric constant insulating film, so as to form an interlayer insulating film;
a plasma fabrication step of fabricating a wiring groove in the interlayer insulating film by plasma processing;
a wiring groove surface exposure step of exposing at least a surface of the wiring groove at the low dielectric constant insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;
a wiring groove surface heating step of heating to a predetermined temperature the surface of the wiring groove that has been exposed to the atmosphere of the mixed gas;
an other insulating film removal step of removing the other insulating film; and
a wiring formation step of forming wiring by introducing a conductive material into the wiring groove. - View Dependent Claims (10)
-
-
11. A method of manufacturing an electronic device, comprising:
-
a conductive film formation step of forming a silicon-containing conductive film on a semiconductor substrate;
a low dielectric constant insulating film formation step of forming a carbon-containing low dielectric constant insulating film on the formed conductive film;
a photoresist layer formation step of forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;
a plasma fabrication step of fabricating a connecting hole reaching the conductive film in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;
a connecting hole surface exposure step of exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;
a connecting hole surface heating step of heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas;
an ashing step of removing the photoresist layer; and
a wiring formation step of forming wiring by introducing a conductive material into the connecting hole.
-
-
12. A program for causing a computer to execute a method of processing a substrate having a carbon-containing low dielectric constant insulating film thereon, the low dielectric constant insulating film having a surface damaged layer having a reduced carbon concentration, the program comprising:
-
a surface damaged layer exposure module for exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a surface damaged layer heating module for heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.
-
-
13. A program for causing a computer to execute a method of processing a substrate having thereon a mask film comprising at least one of a photoresist film and a hard mask film, the mask film having a surface damaged layer, the program comprising:
-
a surface damaged layer exposure module for exposing the surface damaged layer to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a surface damaged layer heating module for heating to a predetermined temperature the surface damaged layer that has been exposed to the atmosphere of the mixed gas.
-
-
14. A program for causing a computer to execute a method of manufacturing an electronic device, the program comprising:
-
a low dielectric constant insulating film formation module for forming a carbon-containing low dielectric constant insulating film on a capacitor comprising a lower electrode, a capacitive insulating film and an upper electrode that has been formed on a semiconductor substrate;
a photoresist layer formation module for forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;
a plasma fabrication module for fabricating a connecting hole reaching the upper electrode in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;
a connecting hole surface exposure module for exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure; and
a connecting hole surface heating module for heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas.
-
-
15. A program for causing a computer to execute a method of manufacturing an electronic device, the program comprising:
-
an interlayer insulating film formation module for forming a carbon-containing low dielectric constant insulating film on a semiconductor substrate, and forming an other insulating film having a lower carbon concentration than the low dielectric constant insulating film on the low dielectric constant insulating film, so as to form an interlayer insulating film;
a plasma fabrication module for fabricating a wiring groove in the interlayer insulating film by plasma processing;
a wiring groove surface exposure module for exposing at least a surface of the wiring groove at the low dielectric constant insulating film to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;
a wiring groove surface heating module for heating to a predetermined temperature the surface of the wiring groove that has been exposed to the atmosphere of the mixed gas;
an other insulating film removal module for removing the other insulating film; and
a wiring formation module for forming wiring by introducing a conductive material into the wiring groove.
-
-
16. A program for causing a computer to execute a method of manufacturing an electronic device, the program comprising:
-
a conductive film formation module for forming a silicon-containing conductive film on a semiconductor substrate;
a low dielectric constant insulating film formation module for forming a carbon-containing low dielectric constant insulating film on the formed conductive film;
a photoresist layer formation module for forming a photoresist layer in a predetermined pattern on the formed low dielectric constant insulating film;
a plasma fabrication module for fabricating a connecting hole reaching the conductive film in the low dielectric constant insulating film by plasma processing using the formed photoresist layer;
a connecting hole surface exposure module for exposing a surface of the fabricated connecting hole to an atmosphere of a mixed gas containing ammonia and hydrogen fluoride under a predetermined pressure;
a connecting hole surface heating module for heating to a predetermined temperature the surface of the connecting hole that has been exposed to the atmosphere of the mixed gas;
an ashing module for removing the photoresist layer; and
a wiring formation module for forming wiring by introducing a conductive material into the connecting hole.
-
Specification