Detection of molecular interactions using a field effect transistor
First Claim
1. A sensor for use in the detection of a molecular interaction comprising a field effect transistor (FET) having an extended gate structure and a core structure including a drain and a source, the core structure and the extended gate structure being located on substantially separate regions of a substrate, the extended gate structure including an exposed metal sensor electrode on which probe molecules can be immobilized, wherein the sensor is operative to produce a change in a drain current (ID) versus gate-source voltage (VGS) electrical characteristic of the FET in response to molecular interaction at the exposed surface of the metal sensor electrode.
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Abstract
A sensor for use in the detection of a molecular interaction comprises a field effect transistor (FET) having a core structure and an extended gate structure, the core structure and the extended gate structure being located on substantially separate regions of a substrate, the extended gate structure including an exposed metal sensor electrode on which probe molecules can be immobilized, wherein, in use, the sensor is operative to produce a change in an electrical characteristic of the FET in response to molecular interaction at the exposed surface of the metal sensor electrode. The sensor is particularly suitable for detecting biomolecular interactions such as the hybridization of DNA, when the sensor is prepared with suitable probe molecules immobilized on the exposed gate metal.
228 Citations
25 Claims
- 1. A sensor for use in the detection of a molecular interaction comprising a field effect transistor (FET) having an extended gate structure and a core structure including a drain and a source, the core structure and the extended gate structure being located on substantially separate regions of a substrate, the extended gate structure including an exposed metal sensor electrode on which probe molecules can be immobilized, wherein the sensor is operative to produce a change in a drain current (ID) versus gate-source voltage (VGS) electrical characteristic of the FET in response to molecular interaction at the exposed surface of the metal sensor electrode.
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20. A method for detecting a molecular interaction comprising the steps of:
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immobilizing at least one probe molecule on a sensor electrode which forms part of an extended gate structure of a field effect transistor (FET), the extended gate structure and a core structure of the FET being located on substantially separate regions of a substrate, the core structure including a drain and a source;
placing an electrolyte containing at least one target molecule in contact with the at least one probe molecule; and
, detecting a change in a drain current (ID) versus gate-source voltage (VGS) electrical characteristic of the FET in response to a molecular interaction between the at least one probe molecule and target molecule at the exposed surface of the metal sensor electrode. - View Dependent Claims (21, 22, 23, 24)
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Specification