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Detection of molecular interactions using a field effect transistor

  • US 20060197118A1
  • Filed: 03/16/2006
  • Published: 09/07/2006
  • Est. Priority Date: 09/19/2003
  • Status: Abandoned Application
First Claim
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1. A sensor for use in the detection of a molecular interaction comprising a field effect transistor (FET) having an extended gate structure and a core structure including a drain and a source, the core structure and the extended gate structure being located on substantially separate regions of a substrate, the extended gate structure including an exposed metal sensor electrode on which probe molecules can be immobilized, wherein the sensor is operative to produce a change in a drain current (ID) versus gate-source voltage (VGS) electrical characteristic of the FET in response to molecular interaction at the exposed surface of the metal sensor electrode.

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