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High frequency integrated circuits

  • US 20060197182A1
  • Filed: 04/26/2006
  • Published: 09/07/2006
  • Est. Priority Date: 10/21/2002
  • Status: Abandoned Application
First Claim
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1. An RF integrated circuit device comprising:

  • a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate;

    c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, d. a thin film capacitor formed on the silicon substrate;

    e. a thin film inductor formed on the silicon substrate;

    f. interconnection means interconnecting the capacitor and inductor to form an LC circuit;

    g. interconnection means electrically connecting the LC circuit between the first high frequency RF integrated circuit and the second high frequency RF integrated circuit.

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