High frequency integrated circuits
First Claim
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1. An RF integrated circuit device comprising:
- a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate;
c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, d. a thin film capacitor formed on the silicon substrate;
e. a thin film inductor formed on the silicon substrate;
f. interconnection means interconnecting the capacitor and inductor to form an LC circuit;
g. interconnection means electrically connecting the LC circuit between the first high frequency RF integrated circuit and the second high frequency RF integrated circuit.
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Abstract
The specification describes a silicon-on-silicon interconnection arrangement to implement high performance RF impedance matching using off-chip passive components. The RF sections of the system are dis-integrated into separate RF functional chips, and the functional chips are flip-chip mounted on a high resistivity silicon intermediate interconnect substrate (SIIS). The passive devices for the impedance matching networks are built into the high resistivity SIIS using thin-film technology.
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Citations
7 Claims
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1. An RF integrated circuit device comprising:
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a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate;
c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, d. a thin film capacitor formed on the silicon substrate;
e. a thin film inductor formed on the silicon substrate;
f. interconnection means interconnecting the capacitor and inductor to form an LC circuit;
g. interconnection means electrically connecting the LC circuit between the first high frequency RF integrated circuit and the second high frequency RF integrated circuit. - View Dependent Claims (2, 3, 4)
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5. A high frequency RF integrated circuit device comprising:
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a. a silicon substrate, the silicon substrate having intrinsic resistivity, b. a first high frequency RF integrated circuit chip mounted on the silicon substrate, the first high frequency RF integrated circuit chip comprising an IF circuit block;
c. a second high frequency RF integrated circuit chip mounted on the silicon substrate, the second high frequency RF integrated circuit chip comprising a mixer circuit block;
d. a third high frequency RF integrated circuit chip mounted on the silicon substrate, the third high frequency RF integrated circuit chip comprising a low noise amplifier circuit block;
e. a fourth high frequency RF integrated circuit chip mounted on the silicon substrate, the fourth high frequency RF integrated circuit chip comprising a voltage controlled oscillator circuit block;
f. a plurality of thin film capacitors formed on the silicon substrate;
g. a plurality of thin film inductors formed on the silicon substrate;
h. first interconnection means electrically interconnecting the capacitors and inductors to form a plurality of LC circuits;
j. interconnection means electrically connecting the LC circuits between selected high frequency RF integrated circuit chips. - View Dependent Claims (6, 7)
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Specification