Non-volatile memory cells, memory arrays including the same and methods of operating cells and arrays
First Claim
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1. A memory cell comprising:
- a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region;
a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height;
a charge storage layer disposed above the tunnel dielectric structure;
an insulating layer disposed above the charge storage layer; and
a gate electrode disposed above the insulating layer, wherein the gate electrode comprises a material having a work function value greater than that of N+ polysilicon.
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Abstract
Memory cells comprising: a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region; a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height; a charge storage layer disposed above the tunnel dielectric structure; an insulating layer disposed above the charge storage layer; and a gate electrode disposed above the insulating layer are described along with arrays thereof and methods of operation.
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Citations
13 Claims
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1. A memory cell comprising:
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a semiconductor substrate having a source region and a drain region disposed below a surface of the substrate and separated by a channel region;
a tunnel dielectric structure disposed above the channel region, the tunnel dielectric structure comprising at least one layer having a small hole-tunneling-barrier height;
a charge storage layer disposed above the tunnel dielectric structure;
an insulating layer disposed above the charge storage layer; and
a gate electrode disposed above the insulating layer, wherein the gate electrode comprises a material having a work function value greater than that of N+ polysilicon. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification