Method and apparatus for fabricating self-emission device
First Claim
1. A method for fabricating at least one self-emission device, including forming a bottom electrode on a substrate directly or via another layer and forming a top electrode on a stack of layers overlying the bottom electrode, the method comprising the step of:
- in a deposition process for depositing the bottom or top electrode or at least one of the stack of layers, performing a deposition using a deposition material gas generation portion provided in a deposition chamber, with the deposition chamber held under pressure.
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Accused Products
Abstract
A method and an apparatus for fabricating a self-emission device are provided, including forming a bottom electrode on a substrate directly or via another layer and forming a top electrode on a stack of layers overlying the bottom electrode, in which no deposition defect portion is formed even in the presence of a foreign matter or a bump or a dip on a deposited surface such as on the bottom electrode. The apparatus includes a deposition chamber, a substrate holder for holding a substrate in the deposition chamber, a pressure control gas inflow path for introducing a pressure control gas into the deposition chamber, and a material gas generation portion, provided in the deposition chamber separately from the pressure control gas inflow path, for generating a deposition material gas. The bottom or top electrode or at least one of the stack of layers is deposited under pressure with the pressure control gas introduced into the deposition chamber.
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Citations
23 Claims
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1. A method for fabricating at least one self-emission device, including forming a bottom electrode on a substrate directly or via another layer and forming a top electrode on a stack of layers overlying the bottom electrode, the method comprising the step of:
in a deposition process for depositing the bottom or top electrode or at least one of the stack of layers, performing a deposition using a deposition material gas generation portion provided in a deposition chamber, with the deposition chamber held under pressure. - View Dependent Claims (3, 4, 6, 11, 13, 15, 16, 19, 21, 22)
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2. A method for fabricating at least one self-emission device, including forming a bottom electrode on a substrate directly or via another layer and forming a top electrode on a stack of layers overlying the bottom electrode, the method comprising the step of:
in a deposition process for depositing the bottom or top electrode or at least one of the stack of layers, performing a deposition using a deposition material gas generation portion, provided in a deposition chamber separately from a path for introducing a pressure control gas, under pressure with the pressure control gas introduced into the deposition chamber. - View Dependent Claims (5, 9, 10, 12, 14, 17, 18, 20, 23)
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7. An apparatus for fabricating at least one self-emission device, including forming a bottom electrode on a substrate directly or via another layer and forming a top electrode on a stack of layers overlying the bottom electrode, the apparatus comprising:
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a deposition chamber;
substrate holding means for holding, in the deposition chamber, a substrate on which the self-emission device is formed;
a pressure control gas inflow path for introducing a pressure control gas into the deposition chamber; and
a material gas generation portion, provided in the deposition chamber separately from the pressure control gas inflow path, for generating a deposition material gas, wherein the bottom or top electrode or at least one of the stack of layers is deposited under pressure with the pressure control gas introduced into the deposition chamber. - View Dependent Claims (8)
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Specification
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Current AssigneeTohoku Pioneer Corporation (Pioneer Corporation)
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Original AssigneeTohoku Pioneer Corporation (Pioneer Corporation)
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InventorsTan, Hiroki
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Application NumberUS11/366,571Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current427/66CPC Class CodesC23C 14/12 Organic materialC23C 14/24 Vacuum evaporationC23C 14/54 Controlling or regulating t...H10K 71/00 Manufacture or treatment sp...H10K 71/16 using physical vapour depos...H10K 71/166 using selective deposition,...H10K 71/40 Thermal treatment, e.g. ann...H10K 71/60 Forming conductive regions ...
