Surface manipulation and selective deposition processes using adsorbed halogen atoms

• US 20060199399A1
• Filed: 02/21/2006
• Published: 09/07/2006
• Est. Priority Date: 02/22/2005
• Status: Abandoned Application

• Current Assignee: Arizona Board of Regents (University of Arizona)
• Original Assignee: Arizona Board of Regents (University of Arizona)
• Inventors: Muscat, Anthony J.
• Application Number:
  US11/358,953
• Publication Number:
  US 20060199399A1
• Time in Patent Office: Days
• US Class Current: 438/798
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/047 using irradiation by energy or particles
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/28167 on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
• CPC Class Codes: H01L 21/306 Chemical or electrical treatment, e.g. electrolytic etching to form insulating layers H01L21/31
• CPC Class Codes: H01L 21/32051 Deposition of metallic or metal-silicide layers

Abstract

The present invention provides a surface preparation process using adsorbed halogen. The halogen is applied in a gas phase with UV light. The adsorbed halogen is subsequently modified in another gas phase reaction. The halogen may be reacted with water to form a hydroxyl-bearing Si—O monolayer that forms a layer for subsequent metal deposition. In one aspect the halogen layer is reacted with an alkyl or alkoxy of the formula R-OH to form a passivation layer. By replacing hydrogen atom termination with alkoxy (e.g.methoxy termination, —OCH₃). The selective deposition process can be used for passivating and depositing thin metal films on material surfaces composed of any combination of the group consisting of semiconductors, conductors, insulators, and the like.

Claims

1. A process for manipulating surface termination on a substrate having a hydrogen atom terminated portion, comprising:

a first step of exposing a surface of said substrate to a halogen gas while the surface is also being irradiated by ultraviolet light to form a halogen surface layer on said hydrogen atom terminated substrate portion; and

a second step of exposing said halogen surface layer to a gas containing a compound of the formula R-OH, wherein R is lower alkyl to form a passivation layer;

wherein said first step and second step are done at temperatures below about 200°

C. and in an inert atmosphere.

2. The process of claim 1 wherein said substrate is a semiconductor material.

3. The process of claim 2 wherein the substrate is a Group IV material.

4. The process of claim 2 wherein the substrate is a Group III/V material.

5. The process of claim 2 wherein said semiconductor material is selected from the group consisting of Si, Ge, and InSb.

6. The process of claim 1 wherein the halogen is chlorine or iodine.

7. The process of claim 1 wherein said ultraviolet light is between 190 and 400 nm.

8. The process of claim 1 further comprising the step of removing said passivation layer by heating.

9. The process of claim 8 wherein removal of said passivation layer is followed by a step of applying to the substrate a gate metal.

10. The process of claim 1 wherein the temperature is between 25°

C. and 75°

C.

11. The process of claim 1 wherein the inert atmosphere is a vacuum of at least 10 Torr.

12. The process of claim 11 wherein the inert atmosphere consists essentially of an inert gas selected from one or more of nitrogen, helium, neon, argon, krypton, xenon, or carbon dioxide.

13. The process of claim 1 wherein R is selected from the group consisting of ethyl, methyl propyl and oxides thereof.

14. A process for manipulating surface termination on a substrate having a hydrogen atom terminated portion, comprising:

a first step of exposing a surface of said substrate to a halogen gas while the surface is also being irradiated by ultraviolet light to form a halogen surface layer on the hydrogen atom terminated portion;

a second step of exposing said halogen surface layer to an aqueous gas to form hydroxyl groups, on the surface of the substrate; and

a third step comprising exposure to a metal halide, whereby metal is deposited only on portions of the surface of the substrate bearing hydroxyl groups,

wherein the first step and second step are done in an inert atmosphere at a temperature below about 75°

C. and the third step is done at a temperature below about 200°

C.

15. The process of claim 14 wherein the metal is selected from the group consisting of:

tungsten, titanium, cobalt, zirconium, and alloys and compounds comprising those metals.

16. The process of claim 14 further comprising the step of heating the substrate above about 300°

C. to remove residual halogen.

17. The process of claim 14 wherein the substrate further comprises an oxidized portion wherein the first second and third steps do not result in metal deposition on the oxidized portion.

18. The process of claim 17 further comprising the step of repeating the second and third steps to form multiple, aligned layers of metal.

19. The process of claim 14 wherein the inert atmosphere is provided by either a vacuum or an inert gas.

20. The process of claim 14 where all steps are performed at a temperature below about 75°

C.