Wavelength-converted semiconductor light emitting device
First Claim
1. A method comprising:
- providing a structure comprising;
a ceramic body including a phosphor, the phosphor being configured to absorb light of a first peak wavelength and emit light of a second peak wavelength; and
a nucleation structure bonded to a surface of the ceramic body; and
growing on the nucleation structure a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, the light emitting region being configured to emit light of the first peak wavelength;
wherein prior to growing, the nucleation structure has a thickness less that one hundred microns.
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Abstract
A material such as a phosphor is optically coupled to a semiconductor structure including a light emitting region disposed between an n-type region and a p-type region, in order to efficiently extract light from the light emitting region into the phosphor. The phosphor may be phosphor grains in direct contact with a surface of the semiconductor structure, or a ceramic phosphor bonded to the semiconductor structure, or to a thin nucleation structure on which the semiconductor structure may be grown. The phosphor is preferably highly absorbent and highly efficient. When the semiconductor structure emits light into such a highly efficient, highly absorbent phosphor, the phosphor may efficiently extract light from the structure, reducing the optical losses present in prior art devices.
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Citations
37 Claims
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1. A method comprising:
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providing a structure comprising;
a ceramic body including a phosphor, the phosphor being configured to absorb light of a first peak wavelength and emit light of a second peak wavelength; and
a nucleation structure bonded to a surface of the ceramic body; and
growing on the nucleation structure a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, the light emitting region being configured to emit light of the first peak wavelength;
wherein prior to growing, the nucleation structure has a thickness less that one hundred microns. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method comprising:
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providing a ceramic body including a phosphor, the phosphor being configured to absorb light of a first peak wavelength and emit light of a second peak wavelength;
providing a semiconductor structure formed on a growth substrate, the semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, the light emitting region being configured to emit light of the first peak wavelength;
bonding the ceramic body to a surface of the semiconductor structure; and
after bonding, removing the growth substrate. - View Dependent Claims (16, 17, 18, 19)
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20. A light emitting device comprising:
a luminescent material, in direct contact with one of the plurality of layers, wherein at a wavelength of light emitted by the light emitting region, the imaginary component k of a refractive index of the luminescent material is greater than 0.01. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A structure comprising:
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a ceramic body; and
a nucleation structure thinner than one hundred microns; and
a bonded interface that connects the ceramic body to the nucleation structure, the bonded interface being disposed between the ceramic body and the nucleation layer;
wherein;
the nucleation structure is configured such that an epitaxial structure may be grown on the nucleation structure; and
any separation between the ceramic body and the nucleation structure is less than one hundred microns. - View Dependent Claims (33, 34, 35)
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36. A structure comprising:
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a package element;
a ceramic body; and
a semiconductor structure disposed between and connected to the ceramic body and the package element, the semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, the light emitting region being configured to emit light of the first peak wavelength;
wherein the package element is separated from the ceramic body by less than one hundred microns and the package element has a lateral extent exceeding a lateral extent of the semiconductor structure. - View Dependent Claims (37)
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Specification