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Wavelength-converted semiconductor light emitting device

  • US 20060202105A1
  • Filed: 03/14/2005
  • Published: 09/14/2006
  • Est. Priority Date: 03/14/2005
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a structure comprising;

    a ceramic body including a phosphor, the phosphor being configured to absorb light of a first peak wavelength and emit light of a second peak wavelength; and

    a nucleation structure bonded to a surface of the ceramic body; and

    growing on the nucleation structure a semiconductor structure comprising a light emitting region disposed between an n-type region and a p-type region, the light emitting region being configured to emit light of the first peak wavelength;

    wherein prior to growing, the nucleation structure has a thickness less that one hundred microns.

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