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INCREASED LIGHT EXTRACTION FROM A NITRIDE LED

  • US 20060202223A1
  • Filed: 03/09/2005
  • Published: 09/14/2006
  • Est. Priority Date: 03/09/2005
  • Status: Active Grant
First Claim
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1. A method for fabricating a light emitting device comprising:

  • depositing epitaxial layers on a growth substrate to produce an epitaxial wafer;

    fabricating a plurality of light emitting diode devices with a lateral current flow geometry on the epitaxial wafer;

    dicing the epitaxial wafer to generate a plurality of light emitting dies;

    flip chip bonding at least one electrode of one or more die to at least one bonding pad of a mount;

    subsequent to bonding of the dies, removing the growth substrate to expose an epitaxial layer; and

    roughening the epitaxial layer by electrode-less photochemical etching.

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