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Field effect transistor with metal source/drain regions

  • US 20060202266A1
  • Filed: 03/14/2005
  • Published: 09/14/2006
  • Est. Priority Date: 03/14/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a gate electrode formed on a gate dielectric layer formed on a semiconductor channel region of a semiconductor film; and

    a pair of source/drain regions formed adjacent to said semiconductor channel region on opposite sides of said gate electrode, said source/drain regions comprising a semiconductor portion adjacent to and in contact with said semiconductor channel and a metal portion adjacent to and in contact with said semiconductor portion.

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