Semiconductor power module

• US 20060202324A1
• Filed: 02/07/2006
• Published: 09/14/2006
• Est. Priority Date: 03/08/2005
• Status: Abandoned Application

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Fujino, Shinichi, Seto, Sadashi, Suwa, Tokihito, Shigeta, Satoru, Hashimoto, Keita
• Application Number:
  US11/348,248
• Publication Number:
  US 20060202324A1
• Time in Patent Office: Days
• US Class Current: 257/706
• CPC Class Codes: H01L 21/4882 Assembly of heatsink parts
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 23/057 the leads being parallel to the base
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 Gold [Au]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/16195 Flat cap [not enclosing an internal cavity]
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

A semiconductor power module has insulative substrate which is configured with a metal wiring pattern formed on an upper first surface thereof, a metal conductor formed on a rear face, opposite the first surface and an insulative layer between the metal wiring pattern and the metal conductor. A semiconductor chip is joined to the metal wiring pattern formed on the first surface of the insulative substrate, using Pb-free solder with a low melting point. A heat sink is bonded to the metal conductor formed on the other surface of the insulative substrate, using a highly heat conductive adhesive having a thermal conductivity of 2 W/(mK) or more.

Claims

1. A semiconductor power module comprising:

an electrically insulating substrate formed by laminations comprising an insulating layer, a metal pattern disposed on a first surface of the insulating layer, and a metal conductor disposed on a second surface, opposite to the first surface, of the insulating layer;

a power semiconductor chip mounted on the insulating substrate via solder which connects electrically between the power semiconductor chip and the metal pattern of the insulating substrate; and

a heat sink bonded to the insulating substrate by at least an adhesive which connects thermally between the heat sink and the metal conductor.

2. The semiconductor power module according to claim 1, wherein the solder has a melting point that is no greater than 250°

C.

3. The semiconductor power module according to claim 1, wherein the solder is Pb-free.

4. The semiconductor power module according to claim 1, wherein:

the metal conductor is formed over substantially all of the second surface of the insulating layer; and

the thickness of the metal conductor is no greater than that of the metal pattern formed on the first surface of the insulating layer.

5. The semiconductor power module according to claim 1, wherein the metal conductor and the heat sink are directly bonded by the adhesive.

6. The semiconductor power module according to claim 1, wherein a copper base is disposed between said metal conductor and said heat sink.

7. The semiconductor power module according to claim 1, wherein the adhesive has a thermal conductivity of at least 2 W/(mK).

8. The semiconductor power module according to claim 1, wherein the metal pattern and the metal conductor are formed from a material selected from the group consisting of Ag, Cu, Al, and a metal containing at least one of Ag, Cu and Al.

9. The semiconductor power module according to claim 1, wherein continuous rated current of the power semiconductor module is at least 100 A.

10. The semiconductor power module according to claim 1, further comprising:

a resin case attached to said heat sink;

a bus bar inserted into said resin case; and

a bonding wire connecting between the metal pattern and the bus bar.

11. The semiconductor power module according to claim 10, further comprising a control substrate covering the upper end of said resin case.

12. The semiconductor power module according to claim 11, further comprising a silicon gel disposed inside of said resin case, wherein said power semiconductor chip is filled with the silicon gel.

13. A semiconductor power module comprising:

a heat sink;

a metal base disposed on said heat sink through heat conductive grease;

an electrically insulating substrate disposed on said metal base through an adhesive, which substrate is formed by laminations comprising an insulating layer, a metal pattern disposed on a first surface of the insulating layer, and a metal conductor disposed on a second surface, opposite to the first surface, of the insulating layer; and

a power semiconductor chip mounted on the insulating substrate via solder which connects electrically between the power semiconductor chip and the metal pattern of the insulating substrate.

14. The semiconductor power module according to claim 13, wherein:

the solder has a melting point no greater than 250°

C.; and

the solder is Pb-free.

15. The semiconductor power module according to claim 13, wherein:

said heat sink contains aluminum; and

said metal base contains copper.

16. The semiconductor power module according to claim 13, further comprising:

a resin case attached to said heat sink;

a bus bar inserted into said resin case;

a bonding wire connecting between the metal pattern and the bus bar and;

a control substrate covering an upper end of said resin case.

17. The semiconductor power module according to claim 16, further comprising a silicon gel disposed inside of said resin case, wherein said power semiconductor chip is filled with the silicon gel.

18. The semiconductor power module according to claim 13, wherein:

the metal conductor is formed over substantially the entire second surface of the insulating layer; and

the thickness of the metal conductor is no greater than that of the metal pattern formed on the first surface of the insulating layer.

19. The semiconductor power module according to claim 13, wherein thermal conductivity of the highly heat conductive adhesive is at least 2 W/(mK).

20. The semiconductor power module according to claim 13, wherein a continuous rated current of the power semiconductor module is at least 100 A.