Efficient method and computer program for modeling and improving static memory performance across process variations and environmental conditions
First Claim
1. A method for improving a design of a memory cell, comprising:
- selecting particular associated subsets of memory cell circuit parameters for each of a plurality of operational performance variables;
determining statistics for each memory cell circuit parameter within said unique subsets for simulation;
statistically simulating each of said operational performance variables over systematic variations of each memory cell circuit parameter in said associated subset for each simulated operational performance variable;
computing sensitivities of each of said operational performance variables to said variations of said memory cell circuit parameters within said associated subset.
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Accused Products
Abstract
An efficient method and computer program for modeling and improving stating memory performance across process variations and environmental conditions provides a mechanism for raising the performance of memory arrays beyond present levels/yields. Statistical (Monte-Carlo) analyses of subsets of circuit parameters are performed for each of several memory performance variables and then sensitivities of each performance variable to 15 each of the circuit parameters are determined. The memory cell design parameters and/or operating conditions of the memory cells are then adjusted in conformity with the sensitivities, resulting in improved memory yield and/or performance. Once a performance level is attained, the sensitivities can then be used to alter the probability distributions of the performance variables to achieve a higher yield. Multiple cell designs can be compared for performance, yield and sensitivity of performance variables to circuit parameters over particular environmental conditions in order to select the best cell design.
127 Citations
20 Claims
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1. A method for improving a design of a memory cell, comprising:
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selecting particular associated subsets of memory cell circuit parameters for each of a plurality of operational performance variables;
determining statistics for each memory cell circuit parameter within said unique subsets for simulation;
statistically simulating each of said operational performance variables over systematic variations of each memory cell circuit parameter in said associated subset for each simulated operational performance variable;
computing sensitivities of each of said operational performance variables to said variations of said memory cell circuit parameters within said associated subset. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A workstation computer system comprising a processor for executing program instructions and a memory coupled to said processor for storing program instructions, said program instructions including program instructions for altering design parameters of a memory cell, said program instructions comprising program instructions for:
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selecting particular associated subsets of memory cell circuit parameters for each of a plurality of operational performance variables;
determining statistics for each memory cell circuit parameter within said unique subsets for simulation;
statistically simulating each of said operational performance variables over systematic variations of each memory cell circuit parameter in said associated subset for each simulated operational performance variable;
computing sensitivities of each of said operational performance variables to said variations of said memory cell circuit parameters within said associated subset. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A computer program product comprising media encoding program instructions for execution on a workstation computer, said program instructions for altering design parameters of a memory cell, said program instructions comprising program instructions for:
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selecting particular associated subsets of memory cell circuit parameters for each of a plurality of operational performance variables;
determining statistics for each memory cell circuit parameter within said unique subsets for simulation;
statistically simulating each of said operational performance variables over systematic variations of each memory cell circuit parameter in said associated subset for each simulated operational performance variable;
computing sensitivities of each of said operational performance variables to said variations of said memory cell circuit parameters within said associated subset. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification