Method for producing a semiconductor device and resulting device
First Claim
1. A method for producing a semiconductor device comprising a plurality of groups consisting of a source, drain and gate contact, or a plurality of groups of an emitter, base and collector contact, wherein the respective types of contact of said groups are interconnected to a common gate, drain and source (or base, collector, emitter) contact, said method comprising the steps of:
- providing a first substrate, comprising on its front side a semiconductor layer, and on top of that layer, i.e. on the front side of said layer, a plurality of gate or base contacts, each gate contact lying in between source and drain ohmic contacts, or each base contact lying in between emitter and collector ohmic contacts, etching vias through the backside of said semiconductor layer, wherein vias are produced directly on top of each contact of at least one type, e.g. on top of all the source ohmic contacts, to thereby expose said ohmic contacts, producing on the backside of said semiconductor layer an interconnecting contact layer to provide an interconnect between said source-gate-drain groups or emitter-base-collector groups, this resulting in a semiconductor device on the second substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention is related to a method of producing a semiconductor device and the resulting device. The method is suitable in the first place for producing high power devices, such as High Electron Mobility Transistors (HEMT), in particular HEMT-devices with multiples source-gate-drain groups or multiple base bipolar transistors. According to the method, the interconnect between the source contacts is not produced by air bridge structures, but by etching vias through the semiconductor layer directly to the ohmic contacts and applying a contact layer on the backside of the device.
-
Citations
24 Claims
-
1. A method for producing a semiconductor device comprising a plurality of groups consisting of a source, drain and gate contact, or a plurality of groups of an emitter, base and collector contact, wherein the respective types of contact of said groups are interconnected to a common gate, drain and source (or base, collector, emitter) contact, said method comprising the steps of:
-
providing a first substrate, comprising on its front side a semiconductor layer, and on top of that layer, i.e. on the front side of said layer, a plurality of gate or base contacts, each gate contact lying in between source and drain ohmic contacts, or each base contact lying in between emitter and collector ohmic contacts, etching vias through the backside of said semiconductor layer, wherein vias are produced directly on top of each contact of at least one type, e.g. on top of all the source ohmic contacts, to thereby expose said ohmic contacts, producing on the backside of said semiconductor layer an interconnecting contact layer to provide an interconnect between said source-gate-drain groups or emitter-base-collector groups, this resulting in a semiconductor device on the second substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
Specification