Compound semiconductor devices and methods of manufacturing the same
First Claim
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1. A compound semiconductor device comprising:
- a substrate;
a first plurality of spherical balls arranged on top of the substrate; and
a first compound semiconductor thin film disposed between and on the spherical balls, the compound semiconductor thin film emitting one of ultraviolet (UV) light, visible (V) light, and infrared (1R) light.
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Abstract
A compound semiconductor device and method of manufacturing the same. The method includes coating a plurality of spherical balls on a substrate and selectively growing a compound semiconductor thin film on the substrate on which the spherical balls are coated. The entire process can be simplified and a high-quality compound semiconductor thin film can be grown in a short amount of time in comparison to an epitaxial lateral overgrowth (ELO) method.
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Citations
27 Claims
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1. A compound semiconductor device comprising:
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a substrate;
a first plurality of spherical balls arranged on top of the substrate; and
a first compound semiconductor thin film disposed between and on the spherical balls, the compound semiconductor thin film emitting one of ultraviolet (UV) light, visible (V) light, and infrared (1R) light. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method of manufacturing a compound semiconductor device, comprising:
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forming a plurality of spherical balls;
coating the spherical balls onto a substrate;
growing a buffer layer on the substrate on which the spherical balls are coated;
selectively growing a compound semiconductor thin film between the spherical balls;
growing the compound semiconductor thin film in a lateral direction so that it grows on the spherical balls; and
continuously growing the compound semiconductor thin film to a desired thickness. - View Dependent Claims (14, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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15. A method of manufacturing a compound semiconductor device, comprising:
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growing a buffer layer on a substrate;
selectively growing a first compound semiconductor thin film on the buffer layer;
growing the clusters or islands for the first compound semiconductor thin film in a lateral direction such that combine into the first compound semiconductor thin film;
forming a plurality of spherical balls;
coating the spherical balls onto the first compound semiconductor thin film;
selectively growing a second compound semiconductor thin film on the first compound semiconductor thin film and between the spherical balls;
growing for the second compound semiconductor thin film in a lateral direction and on the spherical balls; and
continuously growing the second compound semiconductor thin film to a desired thickness.
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Specification