Line edge roughness reduction compatible with trimming

• US 20060205223A1
• Filed: 12/22/2005
• Published: 09/14/2006
• Est. Priority Date: 12/30/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Smayling, Michael C.
• Application Number:
  US11/315,941
• Publication Number:
  US 20060205223A1
• Time in Patent Office: Days
• US Class Current: 438/725
• CPC Class Codes: G03F 7/0035 Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
• CPC Class Codes: G03F 7/0046 with perfluoro compounds, e.g. for dry lithography G03F7/0048 takes precedence
• CPC Class Codes: G03F 7/0397 the macromolecular compound having an alicyclic moiety in a side chain
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: H01L 21/0273 characterised by the treatment of photoresist layers
• CPC Class Codes: H01L 21/28035 the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities H01L21/28105 takes precedence
• CPC Class Codes: H01L 21/28123 Lithography-related aspects, e.g. sub-lithography lengths; Isolation-related aspects, e.g. to solve problems arising at the crossing with the side of the device isolation; Planarisation aspects
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence

Abstract

A method and apparatus for reducing line edge roughness, comprising patterning a photoresist to define lines for etching an underlying layer, depositing a post development material between the lines, curing and removing the post development material to reduce line edge roughness, trimming the lines in the underlying layer, and then etching the underlying layer.

Claims

1. A method of reducing line edge roughness, comprising:

patterning a photoresist to form lines in the photoresist that define lines in an underlying layer;

depositing a post development material between the lines in the photoresist;

curing and removing the post development material to reduce line edge roughness;

trimming the lines in the photoresist; and

then

etching the underlying layer.

2. The method of claim 1, wherein the post development material is a shrink resist.

3. The method of claim 1, wherein the underlying layer is a mask adjacent a gate electrode.

4. The method of claim 2, wherein the shrink resist comprises poly (methyladamantyltrifluoromethacrylate(MAFMA)-norbornenehexafluoroisopropanol (NBHFA)).

5. The method of claim 2, wherein the shrink resist is cured at a temperature of about 120 to about 150°

C.

6. The method of claim 5, wherein the shrink resist is cured for about 20 to about 180 seconds.

7. The method of claim 1, wherein the trimming the lines in the photoresist occurs at a temperature of about 0 to about 80°

C.

8. The method of claim 7, wherein the trimming the lines in the photoresist occurs for about 20 to about 180 seconds.

9. The method of claim 1, wherein removing the post development material occurs at a temperature of about 0 to about 65°

C. and atmospheric pressure.

10. (canceled)

11. A method of reducing line edge roughness, comprising:

patterning a photoresist to define lines in the photoresist for etching an underlying layer, wherein the underlying layer is a gate electrode;

depositing a shrink resist between the lines;

curing and removing the shrink resist to reduce line edge roughness;

trimming the lines in the photoresist; and

then

etching the underlying layer.

12. The method of claim 11, wherein the shrink resist comprises poly (methyladamantyltrifluoromethacrylate(MAFMA)-norbornenehexafluoroisopropanol(NBHFA)).

13. The method of claim 11, wherein the shrink resist is cured at a temperature of about 120 to about 150°

C.

14. The method of claim 13, wherein the shrink resist is cured for about 20 to about 180 seconds.

15. The method of claim 11, wherein the trimming the lines in the photoresist occurs at a temperature of 0 to 80°

C.

16. The method of claim 15, wherein the trimming the lines in the photoresist occurs for about 20 to about 180 seconds.

17. The method of claim 11, wherein removing the shrink resist occurs at a temperature of 0 to 65°

C.

18. The method of claim 17, wherein the removing the shrink resist occurs for about 20 to about 180 seconds.