Line edge roughness reduction compatible with trimming
First Claim
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1. A method of reducing line edge roughness, comprising:
- patterning a photoresist to form lines in the photoresist that define lines in an underlying layer;
depositing a post development material between the lines in the photoresist;
curing and removing the post development material to reduce line edge roughness;
trimming the lines in the photoresist; and
then etching the underlying layer.
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Abstract
A method and apparatus for reducing line edge roughness, comprising patterning a photoresist to define lines for etching an underlying layer, depositing a post development material between the lines, curing and removing the post development material to reduce line edge roughness, trimming the lines in the underlying layer, and then etching the underlying layer.
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Citations
18 Claims
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1. A method of reducing line edge roughness, comprising:
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patterning a photoresist to form lines in the photoresist that define lines in an underlying layer;
depositing a post development material between the lines in the photoresist;
curing and removing the post development material to reduce line edge roughness;
trimming the lines in the photoresist; and
thenetching the underlying layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. (canceled)
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11. A method of reducing line edge roughness, comprising:
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patterning a photoresist to define lines in the photoresist for etching an underlying layer, wherein the underlying layer is a gate electrode;
depositing a shrink resist between the lines;
curing and removing the shrink resist to reduce line edge roughness;
trimming the lines in the photoresist; and
thenetching the underlying layer. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification