Method of producing mask inspection data, method of manufacturing a photo mask and method of manufacturing a semiconductor device

• US 20060206853A1
• Filed: 02/24/2006
• Published: 09/14/2006
• Est. Priority Date: 02/25/2005
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Tsutsui, Tomohiro, Ikenaga, Osamu, Kamo, Takashi
• Application Number:
  US11/360,688
• Publication Number:
  US 20060206853A1
• Time in Patent Office: Days
• US Class Current: 382/144
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

There is disclosed a method of producing mask inspection data, including preparing design data of a semiconductor device preparing a lithography condition relevant to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer, preparing a wafer processing condition relevant to wafer processing using a pattern transferred onto the wafer, preparing a first proximity correction model for correcting proximity effect relevant to the lithography condition and the wafer processing condition, generating mask pattern data based on the design data and the first proximity correction model, and generating mask inspection data corresponding to the mask pattern data.

Claims

1. A method of producing mask inspection data, comprising:

preparing design data of a semiconductor device;

preparing a lithography condition relevant to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer;

preparing a wafer processing condition relevant to wafer processing using a pattern transferred onto the wafer;

preparing a first proximity correction model for correcting proximity effect relevant to the lithography condition and the wafer processing condition;

generating mask pattern data based on the design data and the first proximity correction model; and

generating mask inspection data corresponding to the mask pattern data.

2. The method according to claim 1, wherein the first proximity correction model includes a proximity correction rule for correcting proximity effect relevant to the lithography condition and the wafer processing condition.

3. The method according to claim 1, wherein the first proximity correction model includes a correction model for correcting a dimensional error based on process proximity effect.

4. The method according to claim 1, wherein the first proximity correction model includes a correction model for correcting a dimensional error based on optical proximity effect.

5. A method of manufacturing a photo mask, comprising:

preparing mask pattern data and mask inspection data obtained by the method according to claim 1;

preparing a mask process condition for producing a photo mask;

preparing a second proximity correction model for correcting proximity effect relevant to the mask process condition;

generating mask writing data based on the mask pattern data and the second proximity correction model;

producing a photo mask based on the mask writing data and the mask process condition;

detecting a shape of a pattern formed on the produced photo mask to acquire mask detection information; and

comparing the mask detection information with the mask inspection data to inspect the photo mask.

6. The method according to claim 5, wherein the second proximity correction model is produced using proximity effect data relevant to the mask process condition.

7. The method according to claim 6, further comprising:

generating a new second proximity correction model based on changed proximity effect data if proximity effect data is changed; and

generating new mask writing data based on the mask pattern data and the new second proximity correction model.

14. A method of manufacturing a semiconductor device, comprising:

preparing a photo mask manufactured by the method according to claim 5;

and

transferring a pattern formed on the photo mask onto a semiconductor wafer.

8. A method of manufacturing a photo mask, comprising:

preparing mask pattern data for manufacturing a photo mask having a pattern based on design data, the mask pattern data being based on the design data and a first proximity correction model for correcting proximity effect relevant to lithography condition and wafer processing condition, the lithography condition relating to a lithography process for transferring a mask pattern formed on a photo mask onto a wafer, the wafer processing condition relating to wafer processing using a pattern transferred onto the wafer;

generating mask inspection data for inspecting a pattern to be formed on the photo mask based on the mask pattern data;

preparing a mask process condition for producing the photo mask;

preparing a second proximity correction model for correcting proximity effect relevant to the mask process condition;

generating mask writing data based on the mask pattern data and the second proximity correction model;

producing a photo mask based on the mask writing data and the mask process condition;

detecting a shape of a pattern formed on the produced photo mask to acquire mask detection information; and

comparing the mask detection information with the mask inspection data to inspect the photo mask.

9. The method according to claim 8, wherein the first proximity correction model includes a proximity correction rule for correcting proximity effect relevant to the lithography condition and the wafer processing condition.

10. The method according to claim 8, wherein the first proximity correction model includes a correction model for correcting a dimensional error based on process proximity effect.

11. The method according to claim 8, wherein the first proximity correction model includes a correction model for correcting a dimensional error based on optical proximity effect.

12. The method according to claim 8, wherein the second proximity correction model is produced using proximity effect data relevant to the mask process condition.

13. The method according to claim 12, further comprising:

generating a new second proximity correction model based on changed proximity effect data if proximity effect data is changed,; and

generating new mask writing data based on the mask pattern data and the new second proximity correction model.

15. A method of manufacturing a semiconductor device, comprising:

preparing a photo mask manufactured by the method according to claim 8;

and

transferring a pattern formed on the photo mask onto a semiconductor wafer.