High efficiency inorganic nanorod-enhanced photovoltaic devices

• US 20060207647A1
• Filed: 03/16/2005
• Published: 09/21/2006
• Est. Priority Date: 03/16/2005
• Status: Abandoned Application

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Leboeuf, Steven Francis, Srivastava, Alok Mani, Tsakalakos, Loucas, Sulima, Oleg, Korman, Charles Steven, Lee, Ji-Ung, Ebong, Abasifreke, Wojnarowski, Robert
• Application Number:
  US11/081,967
• Publication Number:
  US 20060207647A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/1085 the devices being of the Metal-Semiconductor-Metal [MSM] Schottky barrier type
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

The present invention is directed to photovoltaic devices comprising nanostructured materials, wherein such photovoltaic devices are comprised exclusively of inorganic components. Depending on the embodiment, such nanostructured materials are either 1-dimensional nanostructures or branched nanostructures, wherein such nanostructures are used to enhance the efficiency of the photovoltaic device, particularly for solar cell applications. Additionally, the present invention is also directed at methods of making and using such devices.

Claims

1. A photovoltaic device comprising:

a) a substrate;

b) a first region comprising an array of 1-dimensional nanostructures positioned on the substrate in a substantially vertical orientation;

c) a second region residing on top of the first region such that contact of the first and second regions forms at least one charge separating junction;

d) a third region comprising a conductive transparent material residing as a layer on top of the second region; and

e) top and bottom contacts operable for connecting the device to an external circuit, wherein the bottom contact is in electrical contact with the first region and the top contact is in electrical contact with the second region;

wherein the first, second, and third regions are comprised exclusively of inorganic components.

2. The photovoltaic device of claim 1, wherein the substrate is comprised of material selected from the group consisting of metal, semiconductor, doped semiconductor, dielectric, polymer, and combinations thereof;

and wherein the substrate has a mechanical rigidity selected from the group consisting of mechanically flexible, mechanically inflexible, and combinations thereof.

3. The photovoltaic device of claim 1, wherein the 1-dimensional nanostructures are positioned, with respect to the substrate, at an angle between about 90°

and about 45°

.

4. The photovoltaic device of claim 1, wherein the first region comprises doped semiconductor nanowires, and wherein the doped semiconductor nanowires comprise a doping selected from the group consisting of p-doping, n-doping, and combinations thereof.

5. The photovoltaic device of claim 1, wherein the 1-dimensional nanostructures comprise semiconductor nanowires comprising semiconducting material selected from the group consisting of silicon, GaAs, GaP, InP, GaInP, Ge, GaInAs, AlGaAs, ZnO, GaN, AlN, InN, BN, Se, CdSe, CdTe, Cd—

O—

Te, Cd—

Mn—

O—

Te, ZnTe, Zn—

O—

Te, Zn—

Mn—

O—

Te, MnTe, Mn—

O—

Te, oxides of copper, carbon, Cu—

In—

Ga—

Se, Cu—

In—

Se, and combinations thereof.

6. The photovoltaic device of claim 1, wherein the density of the 1-dimensional nanostructures is from between about 10³ nanostructures per cm² to about 10¹² nanostructures per cm².

7. The photovoltaic device of claim 1, wherein the density of the 1-dimensional nanostructures is such that they occupy a volume of the first region that is between about 5 percent and about 100 percent.

8. The photovoltaic device of claim 1, wherein the density of the 1-dimensional nanostructures is effective for minimizing shading effects.

9. The photovoltaic device of claim 1, wherein the 1-dimensional nanostructures have a diameter between about 1 nm and about 300 nm.

10. The photovoltaic device of claim 1, wherein the 1-dimensional nanostructures have a height between about 50 nm and about 100 μ

m.

11. The photovoltaic device of claim 1, wherein the 1-dimensional nanostructures vary within the array in a property selected from the group consisting of height, diameter, composition, and combinations thereof.

12. The photovoltaic device of claim 1, wherein the second region comprises a conformal layer of material selected from the group consisting of p-doped semiconductor, n-doped semiconductor, intrinsic semiconductor, amorphous semiconductor, metal, and combinations thereof.

13. The photovoltaic device of claim 1, wherein the second region exists as extensions of the 1-dimensional nanostructures of the first region, and wherein the first and second regions collectively form an array of 1-dimensional nanostructures, such that charge separating junctions exist within the 1-dimensional nanostructures.

14. The photovoltaic device of claim 13, wherein at least some of the 1-dimensional nanostructures comprise multiple charge separating junctions.

15. The photovoltaic device of claim 13, wherein at least one of the first and second regions comprise heterogeneous sub-regions, and wherein the sub-regions are heterogeneous by virtue of a property selected from the group consisting of heterogeneous doping, heterogeneous composition, and combinations thereof.

16. The photovoltaic device of claim 13, wherein at least some of the 1-dimensional nanostructures comprise a graded bandgap.

17. The photovoltaic device of claim 1, wherein at least some of the 1-dimensional nanostructures comprise multiple segments of varying bandgap.

18. The photovoltaic device of claim 13, wherein at least some of the 1-dimensional nanostructures comprise at least one tunneling barrier.

19. The photovoltaic device of claim 1, wherein the charge separating junction comprises a junction selected from the group consisting of heterojunctions, p-n junctions, multiple p-n heterojunctions, p-i-n junctions, Schottky junctions, and combinations thereof.

20. The photovoltaic device of claim 1, wherein the conductive transparent material is selected from the group consisting of indium-tin-oxide glass (ITO), Ga—

In—

Sn—

O (GITO), Zn—

In—

Sn—

O (ZITO), Ga—

In—

O (GIO), Zn—

In—

O (ZIO), and combinations thereof.

21. The photovoltaic device of claim 1, further comprising a plurality of microlenses arrayed on top of the layer of the third region.

22. The photovoltaic device of claim 1, wherein the substrate comprises a surface structured to reduce reflection.

23. The photovoltaic device of claim 1, further comprising a layer of phosphor material on top of the third region.

24. The photovoltaic device of claim 1, wherein the device is configured for use in an application selected from the group consisting of power generation on residential building rooftops, power generation on commercial building rooftops, utility power generation, consumer electronics power generation, solar energy based hydrogen production, power generation for transportation vehicles and systems, photodetectors, and combinations thereof.

51. The photovoltaic device of claim 1, wherein at least some of the 1-dimensional nanostructures comprise at least one material comprising a feature selected from the group consisting of intermediate electronic bands, mini-bands, structures for producing more than one electron per incident photon, and combinations thereof.

52. The photovoltaic device of claim 1, wherein the top contact is made directly to the second region, providing electrical and physical contact to the second region without the presence of the third region.

25. A method of making a photovoltaic device comprising the steps of:

a) forming a first region on a substrate, wherein the first region comprises an array of 1-dimensional nanostructures that are positioned on the substrate in a substantially perpendicular orientation relative to the substrate;

b) establishing a second region of material on top of the first region such that contact of the first and second regions forms at least one charge separating junction;

c) providing a third region, comprising an optically transparent conductive material, as a layer on top of the second region; and

d) providing top and bottom contacts operable for connecting the device to an external circuit, wherein the bottom contact is in electrical contact with the first region and the top contact is in electrical contact with the second region.

26. The method of claim 25, wherein the step of forming the first region comprises a wet etching of a semiconductor material.

27. The method of claim 26, wherein the semiconductor material comprises silicon, and wherein at least some of the material is doped.

28. The method of claim 26, wherein the steps of forming the first region and establishing the second region comprise wet etching of a planar silicon p-n junction with an aqueous hydrofluoric acid solution comprising silver nitrate to provide a first region of doped silicon nanowires arrayed on a commonly doped silicon substrate and a second region of alternatively doped silicon nanowires, the alternatively doped silicon nanowires being extensions of the doped silicon nanowires of the first region and collectively forming an array of heterojunction 1-dimensional silicon nanostructure wires.

29. The method of claim 25, wherein the step of forming the first region involves a self-assembly of templating compounds, wherein the templating compounds direct a solution-based growth of doped 1-dimensional inorganic nanostructures.

30. The method of claim 29, wherein the templating compounds are selected from the group consisting of polymers, oligomers, surfactants, oligonucleotides, DNA, RNA, polypeptides, proteins, viruses, and combinations thereof.

31. The method of claim 29, further comprising a step of heat treating the 1-dimensional inorganic nanostructures to form high-quality crystalline doped 1-dimensional inorganic nanostructures.

32. The method of claim 25, wherein the step of forming a first region on a substrate further comprises the steps of:

a) establishing metal catalyst nanoparticles on the substrate; and

b) growing 1-dimensional nanostructures from the metal catalyst nanoparticles using a deposition method selected from the group consisting of chemical vapor deposition, laser ablation, molecular beam epitaxy, atomic layer deposition, supercritical point chemical vapor deposition, plasma enhanced chemical vapor deposition, low pressure chemical vapor deposition, sputtering, evaporation, and combinations thereof.

33. The method of claim 32, wherein the metal catalyst nanoparticles comprise metal selected from the group consisting of Au, Fe, Co, Ni, Ti, Cr, Cu, Al, Ga, In, Pd, Pt, Zn, Nb, Mo, Ag, Ir, Ta, and combinations and alloys thereof.

34. The method of claim 32, wherein the step of establishing metal catalyst nanoparticles on the substrate is carried out by dispersing metal nanoparticles onto the substrate from a liquid suspension.

35. The method of claim 32, wherein the step of establishing metal catalyst nanoparticles on the substrate further comprises the steps of:

a) depositing a metal catalyst film on the substrate; and

b) annealing of the metal catalyst film to form metal catalyst nanoparticles.

36. The method of claim 32, wherein the step of establishing metal catalyst nanoparticles on the substrate involves a deposition of catalyst metal in nanometer-sized pores in the substrate surface.

37. The method of claim 32, wherein the step of growing involves the sequential use of various deposition precursors to further establish the second region and yield an array of 1-dimensional nanostructures of heterogeneous composition.

38. The method of claim 37, wherein the first and second regions comprise sub-regions of heterogeneous composition, and wherein such heterogeneous composition comprises tunneling barriers.

39. The method of claim 37, further comprising heterogeneous doping to form multiple heterojunctions within the I-dimensional nanostructures.

40. The method of claim 25, wherein the layer of the third region comprises material selected from the group consisting of indium-tin-oxide glass (ITO), Ga—

In—

Sn—

O (GITO), Zn—

In—

Sn—

O (ZITO), Ga—

In—

O (GIO), Zn—

In—

O (ZIO), and combinations thereof.

41. The method of claim 25, further comprising a step of adding microlenses on top of the third region.

42. The method of claim 25, further comprising a step of adding a layer of phosphor material on top of the third region.

43. A photovoltaic device comprising:

a) a substrate;

b) a first region comprising an array of branched nanostructures of semiconducting material positioned on the substrate, wherein charge separating junctions exist within such branched nanostructures;

c) a second region comprising a conductive transparent material residing as a layer on top of the first region; and

d) top and bottom contacts operable for connecting the device to an external circuit;

wherein the first and second regions are comprised exclusively of inorganic components.

44. The photovoltaic device of claim 43, wherein the substrate is comprised of material selected from the group consisting of metal, semiconductor, doped semiconductor, dielectric, and combinations thereof, and wherein the substrate has a mechanical rigidity selected from the group consisting of mechanically flexible, mechanically inflexible, and combinations thereof.

45. The photovoltaic device of claim 43, wherein at least some of the branched nanostructures comprise a doping selected from the group consisting of p-doping, n-doping, and combinations thereof.

46. The photovoltaic device of claim 43, wherein the density of the branched nanostructures is such that they occupy a volume of the first region that is between about 5 percent and about 100 percent.

47. The photovoltaic device of claim 43, wherein the density of the branched nanostructures is effective for minimizing shading effects.

48. The photovoltaic device of claim 43, wherein the charge separating junctions comprises a junctions selected from the group consisting of heterojunctions, p-n junctions, multiple p-n heterojunctions, p-i-n junctions, Schottky junctions, and combinations thereof.

49. The photovoltaic device of claim 43, wherein the substrate comprises a structured surface to reduce reflection.

50. The photovoltaic device of claim 43, further comprising metal contacts connecting the device to an external circuit.

53. A photovoltaic device comprising:

a) a substrate;

b) a first region comprising an array of 1-dimensional nanostructures positioned on the substrate in a substantially vertical orientation;

c) a second region residing on top of the first region such that contact of the first and second regions forms at least one charge separating junction;

d) a third region comprising a conductive transparent material residing as a layer on top of the second region; and

e) top and bottom contacts operable for connecting the device to an external circuit, wherein the bottom contact is in electrical contact with the first region and the top contact is in electrical contact with the second region;

wherein the 1-dimensional nanostructures comprise a surface passivation layer.

54. The photovoltaic device of claim 53, wherein the surface passivation layer is comprised of organic material.