Antireflective coating for semiconductor devices and method for the same
First Claim
1. A digital micro-mirror device having a low-reflectivity substrate, comprising:
- first and second micro-mirrors forming an aperture above a substrate;
a layer of oxide having a thickness from about 150 angstroms to about 1000 angstroms disposed upon an upper surface of the substrate;
a non-conductive layer of aluminum having a thickness from about 5 angstroms to about 120 angstroms disposed upon an upper surface of the oxide; and
wherein the layer of oxide and the non-conductive layer of aluminum act as an optical trap for electromagnetic radiation received through the aperture by the non-conductive layer of metal.
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Accused Products
Abstract
According to one embodiment of the present invention, a semiconductor device includes a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device and a first non-conductive layer of metal disposed upon an upper surface of the dielectric material. The first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation received by the first non-conductive layer of metal. In particular embodiments, the semiconductor device may further comprise a second layer of dielectric material disposed upon an upper surface of the first non-conductive layer of metal and a second non-conductive layer of metal disposed upon an upper surface of the second layer of dielectric material.
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Citations
20 Claims
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1. A digital micro-mirror device having a low-reflectivity substrate, comprising:
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first and second micro-mirrors forming an aperture above a substrate;
a layer of oxide having a thickness from about 150 angstroms to about 1000 angstroms disposed upon an upper surface of the substrate;
a non-conductive layer of aluminum having a thickness from about 5 angstroms to about 120 angstroms disposed upon an upper surface of the oxide; and
wherein the layer of oxide and the non-conductive layer of aluminum act as an optical trap for electromagnetic radiation received through the aperture by the non-conductive layer of metal.
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2. A semiconductor device, comprising:
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a first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device;
a first non-conductive layer of metal disposed upon an upper surface of the dielectric material; and
wherein the first layer of dielectric material and the first non-conductive layer of metal act as an optical trap for electromagnetic radiation incident upon the first non-conductive layer of metal. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for reducing stray radiation in a semiconductor device, comprising:
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allowing electromagnetic radiation to pass through a first non-conducting layer of metal disposed upon an upper surface of a first layer of dielectric material, the first layer of dielectric material disposed upon an upper surface of a substrate of a semiconductor device;
allowing the electromagnetic radiation to pass through the first layer of dielectric material;
allowing the electromagnetic radiation to reflect off of the upper surface of the substrate; and
at least partially reducing an amount of the electromagnetic radiation that is allowed to pass back out of the first non-conducting layer of metal. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20)
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Specification