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MOS transistor with laser-patterned metal gate, and method for making the same

  • US 20060211187A1
  • Filed: 08/11/2005
  • Published: 09/21/2006
  • Est. Priority Date: 03/18/2005
  • Status: Active Grant
First Claim
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1. A method for making a MOS transistor, comprising the steps of:

  • a) forming a layer of metal-containing material on a dielectric film, wherein said dielectric film is on an electrically functional substrate comprising an inorganic semiconductor;

    b) laser patterning a metal gate from said metal-containing material layer; and

    c) forming source and drain is in said inorganic semiconductor in locations substantially adjacent to said metal gate.

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